Part Details for SI4936ADY-T1-GE3 by Vishay Intertechnologies
Overview of SI4936ADY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI4936ADY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
SI4936ADY-T1-GE3
|
Avnet Americas | Transistor MOSFET Array Dual N-Channel 30V 4.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4936ADY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
|
$0.4350 | Buy Now |
|
DISTI #
SI4936ADY-T1-GE3
|
TTI | MOSFETs 30V 5.9A 2.0W 36mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel | Americas - 0 |
|
$0.6790 / $0.7350 | Buy Now |
Part Details for SI4936ADY-T1-GE3
SI4936ADY-T1-GE3 CAD Models
SI4936ADY-T1-GE3 Part Data Attributes
|
|
SI4936ADY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI4936ADY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOIC-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 9 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.4 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |