Part Details for SI4800BDY-T1-GE3 by Vishay Siliconix
Overview of SI4800BDY-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI4800BDY-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI4800BDY-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 6.5A 8SO Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5019 In Stock |
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$0.2914 / $0.8800 | Buy Now |
Part Details for SI4800BDY-T1-GE3
SI4800BDY-T1-GE3 CAD Models
SI4800BDY-T1-GE3 Part Data Attributes:
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SI4800BDY-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI4800BDY-T1-GE3
Vishay Siliconix
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 11.25 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 6.5 A | |
Drain-source On Resistance-Max | 0.0185 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.3 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Reference Standard | IEC61249-2-21 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 75 ns | |
Turn-on Time-Max (ton) | 35 ns |
Alternate Parts for SI4800BDY-T1-GE3
This table gives cross-reference parts and alternative options found for SI4800BDY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4800BDY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SI4800BDY-T1-E3 | Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Vishay Siliconix | SI4800BDY-T1-GE3 vs SI4800BDY-T1-E3 |