SI4436DY-T1-GE3
Description: Power Field-Effect Transistor, 6.1A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Overview of SI4436DY-T1-GE3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 8 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Security and Surveillance Internet of Things (IoT) Entertainment and Gaming Robotics and Drones

Available Datasheets

Part # Manufacturer Description Datasheet
FIDO5100BBCZ Analog Devices REM Switch
FIDO5200CBCZ Analog Devices REM Switch with EtherCAT
ADIN1300CCPZ Analog Devices Industrial Ethernet Gigabit PH

Price & Stock for SI4436DY-T1-GE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 23T8507
Newark Mosfet Transistor, N Channel, 8 A, 60 V, 0.03 Ohm, 10 V, 2.5 V Rohs Compliant: Yes |Vishay SI4436DY-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2483
  • 1 $0.9700
  • 10 $0.8060
  • 25 $0.7520
  • 50 $0.6970
  • 100 $0.6430
$0.6430 / $0.9700 Buy Now
DISTI # 85W3207
Newark N Channel Mosfet, 60V, 8A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Vishay SI4436DY-T1-GE3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 100 $0.5730
$0.5730 Buy Now
DISTI # 16P3740
Newark N Channel Mosfet, 60V, 8A, Soic, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Vishay SI4436DY-T1-GE3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,500 $0.4130
$0.4130 Buy Now
DISTI # SI4436DY-T1-GE3
Avnet Americas Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4436DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 7500
  • 2,500 $0.3200
$0.3200 Buy Now
Future Electronics Single N-Channel 60 V 0.036 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 2500
Reel
  • 2,500 $0.3350
  • 5,000 $0.3300
  • 7,500 $0.3250
  • 10,000 $0.3250
  • 12,500 $0.3150
$0.3150 / $0.3350 Buy Now
DISTI # SI4436DY-T1-GE3
TTI MOSFETs 60V Vds 20V Vgs SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 10000
In Stock
  • 2,500 $0.3580
  • 5,000 $0.3510
  • 7,500 $0.3440
  • 12,500 $0.3380
$0.3380 / $0.3580 Buy Now
DISTI # SI4436DY-T1-GE3
TME Transistor: N-MOSFET, unipolar, 60V, 6.8A, 3.2W, SO8 Min Qty: 1 0
  • 1 $0.8930
  • 5 $0.6140
  • 25 $0.5470
  • 100 $0.4910
  • 500 $0.4580
$0.4580 / $0.8930 RFQ
DISTI # SI4436DY-T1-GE3
EBV Elektronik Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R (Alt: SI4436DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for SI4436DY-T1-GE3 by Vishay Intertechnologies
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Part Data Attributes for SI4436DY-T1-GE3 by Vishay Intertechnologies

SI4436DY-T1-GE3
Vishay Intertechnologies
-
-
Rohs Code
Yes
Part Life Cycle Code
End Of Life
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
11.2 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
6.1 A
Drain-source On Resistance-Max
0.036 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-F8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
5 W
Pulsed Drain Current-Max (IDM)
25 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
FLAT
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SI4436DY-T1-GE3
    Vishay Intertechnologies
    Power Field-Effect Transistor, 6.1A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
    VS

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