Part Details for SI4436DY-T1-E3 by Vishay Intertechnologies
Overview of SI4436DY-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Security and Surveillance
Internet of Things (IoT)
Entertainment and Gaming
Robotics and Drones
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI4436DY-T1-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
75M5468
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Newark | N Channel Mosfet, 60V, 8A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Vishay SI4436DY-T1-E3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.6000 | Buy Now |
DISTI #
79AH6533
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Newark | N-Channel 60-V (D-S) Mosfet Rohs Compliant: No |Vishay SI4436DY-T1-E3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3200 | Buy Now |
DISTI #
SI4436DY-T1-E3
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Avnet Americas | Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4436DY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
$0.3200 | Buy Now |
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Future Electronics | Single N-Channel 60 V 0.036 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.3100 / $0.3300 | Buy Now |
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Bristol Electronics | 2153 |
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RFQ | ||
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Bristol Electronics | 16 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 6.1A I(D), 60V, 0.036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1722 |
|
$0.4375 / $1.2500 | Buy Now |
DISTI #
SI4436DY-T1-E3
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TTI | MOSFETs 60V Vds 20V Vgs SO-8 pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Americas - 5000 In Stock |
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$0.3380 / $0.3590 | Buy Now |
DISTI #
SI4436DY-T1-E3
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TME | Transistor: N-MOSFET, unipolar, 60V, 8A, Idm: 25A, 3.2W, SO8 Min Qty: 1 | 0 |
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$0.3910 / $0.8370 | RFQ |
DISTI #
C1S803600845042
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes | 2500 |
|
$0.3270 | Buy Now |
Part Details for SI4436DY-T1-E3
SI4436DY-T1-E3 CAD Models
SI4436DY-T1-E3 Part Data Attributes
|
SI4436DY-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4436DY-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 6.1A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 11.2 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 6.1 A | |
Drain-source On Resistance-Max | 0.036 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 5 W | |
Pulsed Drain Current-Max (IDM) | 25 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |