Datasheets
SI4436DY-T1-E3 by:

Power Field-Effect Transistor, 6.1A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

Part Details for SI4436DY-T1-E3 by Vishay Intertechnologies

Overview of SI4436DY-T1-E3 by Vishay Intertechnologies

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Applications Consumer Electronics Security and Surveillance Internet of Things (IoT) Entertainment and Gaming Robotics and Drones

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Price & Stock for SI4436DY-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 75M5468
Newark N Channel Mosfet, 60V, 8A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Vishay SI4436DY-T1-E3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 100 $0.6000
$0.6000 Buy Now
DISTI # 79AH6533
Newark N-Channel 60-V (D-S) Mosfet Rohs Compliant: No |Vishay SI4436DY-T1-E3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.3200
$0.3200 Buy Now
DISTI # SI4436DY-T1-E3
Avnet Americas Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4436DY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.3200
$0.3200 Buy Now
Future Electronics Single N-Channel 60 V 0.036 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3300
  • 5,000 $0.3250
  • 7,500 $0.3200
  • 10,000 $0.3150
  • 12,500 $0.3100
$0.3100 / $0.3300 Buy Now
Bristol Electronics   2153
RFQ
Bristol Electronics   16
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 6.1A I(D), 60V, 0.036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 1722
  • 1 $1.2500
  • 321 $0.5000
  • 1,601 $0.4375
$0.4375 / $1.2500 Buy Now
DISTI # SI4436DY-T1-E3
TTI MOSFETs 60V Vds 20V Vgs SO-8 pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 5000
In Stock
  • 2,500 $0.3590
  • 5,000 $0.3470
  • 25,000 $0.3380
$0.3380 / $0.3590 Buy Now
DISTI # SI4436DY-T1-E3
TME Transistor: N-MOSFET, unipolar, 60V, 8A, Idm: 25A, 3.2W, SO8 Min Qty: 1 0
  • 1 $0.8370
  • 10 $0.7260
  • 25 $0.6700
  • 100 $0.5470
  • 250 $0.5020
  • 500 $0.4470
  • 1,000 $0.4020
  • 2,500 $0.3910
$0.3910 / $0.8370 RFQ
DISTI # C1S803600845042
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 2500
  • 2,500 $0.3270
$0.3270 Buy Now
DISTI # C1S803601433057
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 1615
  • 1 $0.6170
  • 10 $0.5050
  • 50 $0.4650
  • 100 $0.3920
  • 200 $0.3800
  • 500 $0.3330
  • 1,000 $0.2970
$0.2970 / $0.6170 Buy Now
DISTI # SI4436DY-T1-E3
EBV Elektronik Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R (Alt: SI4436DY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI4436DY-T1-E3

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SI4436DY-T1-E3 Part Data Attributes

SI4436DY-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4436DY-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 6.1A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 11.2 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 6.1 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 5 W
Pulsed Drain Current-Max (IDM) 25 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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