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30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
27W2091
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Newark | Transistor, Mosfet, Transistor Polarity:P Channel, Continuous Drain Current Id:-8.8A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.015Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-1.7V, Power Dissipation Rohs Compliant: Yes |Onsemi SI4435DY Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 12099 |
|
$0.5470 / $0.9570 | Buy Now |
DISTI #
86AK8737
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Newark | Mosfet, P-Ch, 30V, 8.8A, 175Deg C, 2.5W Rohs Compliant: Yes |Onsemi SI4435DY Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 5000 |
|
$0.3840 / $0.4980 | Buy Now |
DISTI #
29X6856
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Newark | Mosfet, P Channel, -30V, -8.8A, Soic-8, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:8.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Onsemi SI4435DY Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.3720 / $0.5040 | Buy Now |
DISTI #
38C8609
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Newark | P Channel Mosfet, -30V, 8.8A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:8.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Onsemi SI4435DY Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.6020 / $1.0400 | Buy Now |
DISTI #
SI4435DYFSCT-ND
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DigiKey | MOSFET P-CH 30V 8.8A 8SOIC Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
40615 In Stock |
|
$0.3658 / $0.9800 | Buy Now |
DISTI #
SI4435DY
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Avnet Americas | Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4435DY) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.3628 / $0.4330 | Buy Now |
DISTI #
SI4435DY
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Avnet Americas | Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4435DY) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.3628 / $0.4330 | Buy Now |
DISTI #
512-SI4435DY
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Mouser Electronics | MOSFET 30V SinGLE P-Ch RoHS: Compliant | 13310 |
|
$0.3660 / $0.8900 | Buy Now |
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Future Electronics | P-Channel 30 V 20 mOhm 17 nC Surface Mount PowerTrench Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.3700 / $0.3950 | Buy Now |
|
Future Electronics | P-Channel 30 V 20 mOhm 17 nC Surface Mount PowerTrench Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.3700 / $0.3950 | Buy Now |
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SI4435DY
onsemi
Buy Now
Datasheet
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Compare Parts:
SI4435DY
onsemi
30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ, 2500-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SO-8 | |
Manufacturer Package Code | 751EB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 39 Weeks | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 8.8 A | |
Drain-source On Resistance-Max | 0.02 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI4435DY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4435DY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI4435DYL99Z | Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | SI4435DY vs SI4435DYL99Z |
SI4435DYD84Z | Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | SI4435DY vs SI4435DYD84Z |
SI4435DY-T1-A-E3 | Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 | Vishay Siliconix | SI4435DY vs SI4435DY-T1-A-E3 |
SI4435DY | Transistor, | Vishay Siliconix | SI4435DY vs SI4435DY |
SI4435DYS62Z | Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | SI4435DY vs SI4435DYS62Z |
SI4435DY_NL | Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | SI4435DY vs SI4435DY_NL |
SI4435DY | Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | SI4435DY vs SI4435DY |
SI4435DY-REVA | Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Siliconix | SI4435DY vs SI4435DY-REVA |