Part Details for SI4401BDY-T1-GE3 by Vishay Intertechnologies
Overview of SI4401BDY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI4401BDY-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
16P3734
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Newark | P Channel Mosfet, -40V, 10.5A, Soic, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:10.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Power Dissipation:1.5W Rohs Compliant: Yes |Vishay SI4401BDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.8830 / $0.8960 | Buy Now |
DISTI #
51AK9382
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Newark | Mosfet, P Ch, -40V, -8.7A, Soic |Vishay SI4401BDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.9700 | Buy Now |
DISTI #
69W7197
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Newark | Mosfet, P Channel, -40V, -8.7A, Soic-8, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:8.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI4401BDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.2000 | Buy Now |
DISTI #
SI4401BDY-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4401BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.8505 / $1.0804 | Buy Now |
DISTI #
SI4401BDY-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4401BDY-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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$0.8505 / $1.0521 | Buy Now |
DISTI #
781-SI4401BDY-T1-GE3
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Mouser Electronics | MOSFET 40V 10.5A 2.9W 14mohm @ 10V RoHS: Compliant | 15675 |
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$0.7830 / $1.8700 | Buy Now |
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Future Electronics | P-CHANNEL 40-V (D-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.8150 / $0.8450 | Buy Now |
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Future Electronics | P-CHANNEL 40-V (D-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.8150 / $0.8450 | Buy Now |
DISTI #
SI4401BDY-T1-GE3
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TTI | MOSFET 40V 10.5A 2.9W 14mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Americas - 10000 In Stock |
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$0.7500 / $0.8100 | Buy Now |
DISTI #
SI4401BDY-T1-GE3
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TME | Transistor: P-MOSFET, unipolar, -40V, -8.7A, Idm: -50A, 0.95W, SO8 Min Qty: 1 | 0 |
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$0.9300 / $1.8400 | RFQ |
Part Details for SI4401BDY-T1-GE3
SI4401BDY-T1-GE3 CAD Models
SI4401BDY-T1-GE3 Part Data Attributes:
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SI4401BDY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4401BDY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 8.7A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, MS-012, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN AND LEAD FREE, MS-012, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 8.7 A | |
Drain-source On Resistance-Max | 0.014 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.9 W | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |