Datasheets
SI4401BDY-T1-GE3 by:

Small Signal Field-Effect Transistor, 8.7A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, MS-012, SOP-8

Part Details for SI4401BDY-T1-GE3 by Vishay Intertechnologies

Overview of SI4401BDY-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SI4401BDY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 16P3734
Newark P Channel Mosfet, -40V, 10.5A, Soic, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:10.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Power Dissipation:1.5W Rohs Compliant: Yes |Vishay SI4401BDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,500 $0.8960
  • 5,000 $0.8840
  • 10,000 $0.8830
$0.8830 / $0.8960 Buy Now
DISTI # 51AK9382
Newark Mosfet, P Ch, -40V, -8.7A, Soic |Vishay SI4401BDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1,000 $0.9700
$0.9700 Buy Now
DISTI # 69W7197
Newark Mosfet, P Channel, -40V, -8.7A, Soic-8, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:8.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI4401BDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 250 $1.2000
$1.2000 Buy Now
DISTI # SI4401BDY-T1-GE3
Avnet Americas Trans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4401BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.0804
  • 5,000 $1.0458
  • 10,000 $1.0111
  • 15,000 $0.9702
  • 20,000 $0.9387
  • 25,000 $0.8946
  • 250,000 $0.8505
$0.8505 / $1.0804 Buy Now
DISTI # SI4401BDY-T1-GE3
Avnet Americas Trans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4401BDY-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel 0
  • 1 $1.0521
  • 10 $1.0269
  • 30 $1.0017
  • 50 $0.9450
  • 100 $0.9198
  • 250 $0.8946
  • 500 $0.8505
$0.8505 / $1.0521 Buy Now
DISTI # 781-SI4401BDY-T1-GE3
Mouser Electronics MOSFET 40V 10.5A 2.9W 14mohm @ 10V RoHS: Compliant 15675
  • 1 $1.8700
  • 10 $1.5600
  • 100 $1.2400
  • 250 $1.1500
  • 500 $1.0400
  • 1,000 $0.8890
  • 2,500 $0.8290
  • 5,000 $0.7980
  • 10,000 $0.7830
$0.7830 / $1.8700 Buy Now
Future Electronics P-CHANNEL 40-V (D-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.8450
  • 5,000 $0.8150
$0.8150 / $0.8450 Buy Now
Future Electronics P-CHANNEL 40-V (D-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.8450
  • 5,000 $0.8150
$0.8150 / $0.8450 Buy Now
DISTI # SI4401BDY-T1-GE3
TTI MOSFET 40V 10.5A 2.9W 14mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 10000
In Stock
  • 2,500 $0.8100
  • 5,000 $0.7800
  • 7,500 $0.7600
  • 12,500 $0.7500
$0.7500 / $0.8100 Buy Now
DISTI # SI4401BDY-T1-GE3
TME Transistor: P-MOSFET, unipolar, -40V, -8.7A, Idm: -50A, 0.95W, SO8 Min Qty: 1 0
  • 1 $1.8400
  • 10 $1.5100
  • 25 $1.3500
  • 100 $1.2300
  • 250 $1.1900
  • 500 $1.0700
  • 1,000 $0.9600
  • 2,500 $0.9300
$0.9300 / $1.8400 RFQ
DISTI # TMOS3554
Rutronik P-CH 40V 8,7A 11mOhm SO-8 RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel Stock DE - 5000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 2,500 $1.2900
  • 5,000 $1.1000
$1.1000 / $1.2900 Buy Now
DISTI # SI4401BDY-T1-GE3
EBV Elektronik Trans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R (Alt: SI4401BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
LCSC 40V 8.7A 1.5W 14m10V10.5A 3V250uA 1PCSPChannel SOIC-8 MOSFETs ROHS 2038
  • 1 $1.3329
  • 10 $1.1297
  • 30 $1.0187
  • 100 $0.8930
  • 500 $0.8374
  • 1,000 $0.8111
$0.8111 / $1.3329 Buy Now
New Advantage Corporation LF SMD MOSFET PCH SI4401BDYT1GE3 SOIC8 RoHS: Compliant Min Qty: 1 Package Multiple: 10 849
  • 100 $0.8200
  • 500 $0.7100
$0.7100 / $0.8200 Buy Now

Part Details for SI4401BDY-T1-GE3

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SI4401BDY-T1-GE3 Part Data Attributes:

SI4401BDY-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4401BDY-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 8.7A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, MS-012, SOP-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN AND LEAD FREE, MS-012, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 8.7 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.9 W
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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