Datasheets
SI4153DY-T1-GE3 by:

Power Field-Effect Transistor, 19.3A I(D), 30V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for SI4153DY-T1-GE3 by Vishay Intertechnologies

Overview of SI4153DY-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Price & Stock for SI4153DY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 26AK3559
Newark Mosfet, P-Ch, 30V, 19.3A, Soic Rohs Compliant: Yes |Vishay SI4153DY-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 4759
  • 1 $0.7340
  • 10 $0.6480
  • 25 $0.5840
  • 50 $0.5200
  • 100 $0.4560
$0.4560 / $0.7340 Buy Now
DISTI # 86AK6287
Newark Mosfet, P-Ch, 30V, 19.3A, Soic Rohs Compliant: Yes |Vishay SI4153DY-T1-GE3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,500 $0.2980
  • 5,000 $0.2910
  • 10,000 $0.2820
  • 15,000 $0.2720
  • 25,000 $0.2700
$0.2700 / $0.2980 Buy Now
DISTI # SI4153DY-T1-GE3
Avnet Americas P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4153DY-T1-GE3) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.2266
  • 10,000 $0.2230
  • 15,000 $0.2194
  • 25,000 $0.2157
  • 50,000 $0.2132
$0.2132 / $0.2266 Buy Now
DISTI # 781-SI453DY-Y1-GE3
Mouser Electronics MOSFETs SO8 P CHAN 30V RoHS: Compliant 16509
  • 1 $0.8300
  • 10 $0.5680
  • 100 $0.3910
  • 500 $0.3110
  • 1,000 $0.2840
  • 2,500 $0.2670
  • 5,000 $0.2530
  • 10,000 $0.2380
  • 25,000 $0.2260
$0.2260 / $0.8300 Buy Now
Future Electronics P-Channel 30-V (D-S) MOSFET SO-8, 9.5 m 10V, 15 m 4.5V RoHS: Compliant pbFree: Yes Min Qty: 2 Package Multiple: 2 Lead time: 17 Weeks Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $0.2250
$0.2250 Buy Now
DISTI # SI4153DY-T1-GE3
TTI MOSFETs SO8 P CHAN 30V RoHS: Compliant pbFree: Pb-Free Min Qty: 5000 Package Multiple: 2500 Container: Reel Americas - 0
  • 5,000 $0.2370
  • 7,500 $0.2310
  • 12,500 $0.2270
$0.2270 / $0.2370 Buy Now
DISTI # SI4153DY-T1-GE3
EBV Elektronik P-CHANNEL 30-V (D-S) MOSFET (Alt: SI4153DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days EBV - 5000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 5000
  • 2,500 $0.4129
  • 5,000 $0.3821
$0.3821 / $0.4129 Buy Now

Part Details for SI4153DY-T1-GE3

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SI4153DY-T1-GE3 Part Data Attributes

SI4153DY-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4153DY-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 19.3A I(D), 30V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOP-8
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 11.25 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 19.3 A
Drain-source On Resistance-Max 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 390 pF
JESD-30 Code R-PDSO-G8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 5.6 W
Pulsed Drain Current-Max (IDM) 100 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 90 ns
Turn-on Time-Max (ton) 45 ns

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