Datasheets
SI4134DY-T1-GE3 by:

Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

Part Details for SI4134DY-T1-GE3 by Vishay Intertechnologies

Overview of SI4134DY-T1-GE3 by Vishay Intertechnologies

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Price & Stock for SI4134DY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 55R1920
Newark Mosfet, N Channel, 30V, 14A, So8, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:14A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Vishay SI4134DY-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 948
  • 1 $0.3290
  • 10 $0.3290
  • 25 $0.3290
  • 50 $0.3290
  • 100 $0.3290
$0.3290 Buy Now
DISTI # 26AK9921
Newark N-Channel 30-V (D-S) Mosfet |Vishay SI4134DY-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2380
  • 1 $0.2360
  • 10 $0.2360
  • 25 $0.2360
  • 50 $0.2360
  • 100 $0.2360
$0.2360 Buy Now
DISTI # 15R4966
Newark Mosfet Transistor, N Channel, 14 A, 30 V, 11.5 Mohm, 10 V, 1.8 V |Vishay SI4134DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.3520
  • 5,000 $0.3440
  • 10,000 $0.3180
  • 20,000 $0.2960
  • 30,000 $0.2760
  • 50,000 $0.2640
$0.2640 / $0.3520 Buy Now
DISTI # SI4134DY-T1-GE3
Avnet Americas Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4134DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel 80000
  • 2,500 $0.2036
  • 5,000 $0.1970
  • 10,000 $0.1905
  • 15,000 $0.1840
  • 20,000 $0.1769
  • 25,000 $0.1686
  • 250,000 $0.1603
$0.1603 / $0.2036 Buy Now
DISTI # SI4134DY-T1-GE3
Avnet Americas Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4134DY-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel 0
  • 1 $0.1982
  • 10 $0.1935
  • 30 $0.1887
  • 50 $0.1781
  • 100 $0.1733
  • 250 $0.1686
  • 500 $0.1603
$0.1603 / $0.1982 Buy Now
DISTI # 26AK9921
Avnet Americas Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 26AK9921) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack 2380 Partner Stock
  • 1 $0.7900
  • 10 $0.6940
  • 25 $0.6290
  • 50 $0.5640
  • 100 $0.4990
$0.4990 / $0.7900 Buy Now
DISTI # 55R1920
Avnet Americas Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 55R1920) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack 948 Partner Stock
  • 1 $0.8380
  • 10 $0.7420
  • 25 $0.6770
  • 50 $0.6120
  • 100 $0.5470
$0.5470 / $0.8380 Buy Now
DISTI # 781-SI4134DY-T1-GE3
Mouser Electronics MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant 14269
  • 1 $0.7600
  • 10 $0.6400
  • 100 $0.4550
  • 500 $0.3800
  • 1,000 $0.3240
  • 2,500 $0.2500
  • 25,000 $0.2430
$0.2430 / $0.7600 Buy Now
Future Electronics Single N-Channel 30 V 14 mOhm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 22500
Reel
  • 2,500 $0.1800
  • 5,000 $0.1760
  • 7,500 $0.1740
  • 12,500 $0.1710
  • 25,000 $0.1660
$0.1660 / $0.1800 Buy Now
Future Electronics Single N-Channel 30 V 14 mOhm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.1780
  • 5,000 $0.1740
  • 7,500 $0.1720
  • 12,500 $0.1700
  • 25,000 $0.1650
$0.1650 / $0.1780 Buy Now
Bristol Electronics   50
RFQ
Bristol Electronics   7500
RFQ
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 14A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA 6000
  • 1 $0.5625
  • 712 $0.2250
  • 3,557 $0.1969
$0.1969 / $0.5625 Buy Now
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 14A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA 1880
  • 1 $0.5625
  • 179 $0.2813
  • 712 $0.2250
$0.2250 / $0.5625 Buy Now
DISTI # SI4134DY-T1-GE3
TTI MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 45000
In Stock
  • 2,500 $0.1850
  • 5,000 $0.1810
  • 7,500 $0.1750
  • 12,500 $0.1720
  • 25,000 $0.1680
  • 250,000 $0.1600
$0.1600 / $0.1850 Buy Now
DISTI # SI4134DY-T1-GE3
TME Transistor: N-MOSFET, unipolar, 30V, 11.2A, 3.2W, SO8 Min Qty: 1 7216
  • 1 $0.7860
  • 5 $0.3310
  • 25 $0.2970
  • 100 $0.2620
  • 500 $0.2360
$0.2360 / $0.7860 Buy Now
DISTI # TMOSP11170
Rutronik N-CH 30V 14A 14mOhm SO-8 RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel Stock DE - 5000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 2,500 $0.2199
  • 5,000 $0.2074
  • 7,500 $0.1950
  • 10,000 $0.1760
  • 12,500 $0.1697
$0.1697 / $0.2199 Buy Now
DISTI # SI4134DY-T1-GE3
Avnet Asia Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R (Alt: SI4134DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days 0
  • 2,500 $0.5162
  • 5,000 $0.5090
  • 7,500 $0.5020
  • 12,500 $0.4953
  • 25,000 $0.4822
  • 62,500 $0.4699
  • 125,000 $0.4581
$0.4581 / $0.5162 Buy Now
DISTI # SI4134DY-T1-GE3
Direct Components, Inc.   400
RFQ
DISTI # SI4134DY-T1-GE3
EBV Elektronik Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R (Alt: SI4134DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days EBV - 2500
Buy Now

Part Details for SI4134DY-T1-GE3

SI4134DY-T1-GE3 CAD Models

SI4134DY-T1-GE3 Part Data Attributes:

SI4134DY-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4134DY-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 5 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI4134DY-T1-GE3

This table gives cross-reference parts and alternative options found for SI4134DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4134DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4134DY-T1-E3 Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, MS-012, SOIC-8 Vishay Intertechnologies SI4134DY-T1-GE3 vs SI4134DY-T1-E3
SI4134DY-T1-E3 Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, MS-012, SOIC-8 Vishay Siliconix SI4134DY-T1-GE3 vs SI4134DY-T1-E3
SI4134DY-T1-GE3 Small Signal Field-Effect Transistor, 9.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Vishay Siliconix SI4134DY-T1-GE3 vs SI4134DY-T1-GE3
Part Number Description Manufacturer Compare
SI4892DY-T1-E3 TRANSISTOR 8800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI4134DY-T1-GE3 vs SI4892DY-T1-E3
SI4892DY-E3 Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4134DY-T1-GE3 vs SI4892DY-E3
SI4134DY-T1-GE3 Small Signal Field-Effect Transistor, 9.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Vishay Siliconix SI4134DY-T1-GE3 vs SI4134DY-T1-GE3
SI4892DY-T1-E3 Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Intertechnologies SI4134DY-T1-GE3 vs SI4892DY-T1-E3
SI4134DY-T1-E3 Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, MS-012, SOIC-8 Vishay Siliconix SI4134DY-T1-GE3 vs SI4134DY-T1-E3

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