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Part Details for SI3493BDV-T1-GE3 by Vishay Siliconix
Overview of SI3493BDV-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI3493BDV-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SI3493BDV-T1-GE3CT-ND
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DigiKey | MOSFET P-CH 20V 8A 6TSOP Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
15425 In Stock |
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$0.3053 / $0.9200 | Buy Now |
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New Advantage Corporation | SI3493BDV Series 20 V 0.0275 O Surface Mount Power Mosfet - TSOP-6 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 12000 |
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$0.3267 / $0.3500 | Buy Now |
Part Details for SI3493BDV-T1-GE3
SI3493BDV-T1-GE3 CAD Models
SI3493BDV-T1-GE3 Part Data Attributes
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SI3493BDV-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI3493BDV-T1-GE3
Vishay Siliconix
TRANSISTOR 8000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TSOP | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.0275 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.97 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI3493BDV-T1-GE3
This table gives cross-reference parts and alternative options found for SI3493BDV-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3493BDV-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STT5PF20V | 5000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6 | STMicroelectronics | SI3493BDV-T1-GE3 vs STT5PF20V |
| SI3445DVD87Z | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3493BDV-T1-GE3 vs SI3445DVD87Z |
| FDC602P | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3493BDV-T1-GE3 vs FDC602P |
| PMN48XP,115 | PMN48XP - 20 V, 4.1 A P-channel Trench MOSFET@en-us TSOP 6-Pin | Nexperia | SI3493BDV-T1-GE3 vs PMN48XP,115 |
| FDC638PD87Z | Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3493BDV-T1-GE3 vs FDC638PD87Z |
| FDC638P | P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ, 3000-REEL | onsemi | SI3493BDV-T1-GE3 vs FDC638P |
| SI3493BDV-T1-GE3 | Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 | Vishay Intertechnologies | SI3493BDV-T1-GE3 vs SI3493BDV-T1-GE3 |
| FDC602PD87Z | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3493BDV-T1-GE3 vs FDC602PD87Z |
| SI3493DV-T1-E3 | TRANSISTOR 5300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, TSOP-6, FET General Purpose Small Signal | Vishay Siliconix | SI3493BDV-T1-GE3 vs SI3493DV-T1-E3 |
| UPA1913TE | 4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, 6 PIN | Renesas Electronics Corporation | SI3493BDV-T1-GE3 vs UPA1913TE |