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Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6
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Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
42AJ0609
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Newark | P-Channel 30-V (D-S) Mosfet |Vishay SI3483DDV-T1-BE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.1650 | Buy Now |
DISTI #
SI3483DDV-T1-BE3
|
Avnet Americas | Transistor MOSFET P-CH 30V 8A 6-Pin TSOP - Tape and Reel (Alt: SI3483DDV-T1-BE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.1473 | Buy Now |
DISTI #
78-SI3483DDV-T1-BE3
|
Mouser Electronics | MOSFETs TSOP P CHAN 30V RoHS: Compliant | 113210 |
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$0.1510 / $0.5300 | Buy Now |
|
Future Electronics | -30V, -8A, 0.0312ohm, TrenchFET® Power MOSFET, P-Channel, TSOP-6 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel | 0Reel |
|
$0.1500 / $0.1600 | Buy Now |
DISTI #
SI3483DDV-T1-BE3
|
TTI | MOSFETs TSOP P CHAN 30V RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.1500 / $0.1590 | Buy Now |
DISTI #
SI3483DDV-T1-BE3
|
EBV Elektronik | Transistor MOSFET P-CH 30V 8A 6-Pin TSOP (Alt: SI3483DDV-T1-BE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
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SI3483DDV-T1-BE3
Vishay Intertechnologies
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Datasheet
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SI3483DDV-T1-BE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | MO-193C, TSOP-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.0312 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 35 pF | |
JEDEC-95 Code | MO-193AA | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 3 W | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |