There are no models available for this part yet.
Overview of SI3460DV-T1-GE3 by Vishay Intertechnologies
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 2 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI3460DV-T1-GE3 by Vishay Intertechnologies
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 3000 |
|
RFQ | ||||
Quest Components | 2400 |
|
$0.7560 / $2.0160 | Buy Now |
CAD Models for SI3460DV-T1-GE3 by Vishay Intertechnologies
Part Data Attributes for SI3460DV-T1-GE3 by Vishay Intertechnologies
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
Package Description
|
MO-193C, TSOP-6
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
20 V
|
Drain Current-Max (ID)
|
5.1 A
|
Drain-source On Resistance-Max
|
0.027 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
MO-193AA
|
JESD-30 Code
|
R-PDSO-G6
|
Number of Elements
|
1
|
Number of Terminals
|
6
|
Operating Mode
|
ENHANCEMENT MODE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Element Material
|
SILICON
|
Alternate Parts for SI3460DV-T1-GE3
This table gives cross-reference parts and alternative options found for SI3460DV-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3460DV-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI3460DV-T1-E3 | Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6 | Vishay Intertechnologies | SI3460DV-T1-GE3 vs SI3460DV-T1-E3 |
SI3460DV-T1 | Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 | Vishay Siliconix | SI3460DV-T1-GE3 vs SI3460DV-T1 |
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