Part Details for SI1413EDH-T1-E3 by Vishay Intertechnologies
Overview of SI1413EDH-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI1413EDH-T1-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 12973 |
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RFQ | ||
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Quest Components | 10378 |
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$0.2520 / $0.8400 | Buy Now | |
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Quest Components | 2179 |
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$0.3360 / $0.8400 | Buy Now |
Part Details for SI1413EDH-T1-E3
SI1413EDH-T1-E3 CAD Models
SI1413EDH-T1-E3 Part Data Attributes
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SI1413EDH-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI1413EDH-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SC-70, 6 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 2.3 A | |
Drain-source On Resistance-Max | 0.115 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.56 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | PURE MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SI1413EDH-T1-E3
This table gives cross-reference parts and alternative options found for SI1413EDH-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1413EDH-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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FDC6392S_NL | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | SI1413EDH-T1-E3 vs FDC6392S_NL |
FDC6392S | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | SI1413EDH-T1-E3 vs FDC6392S |
FDC6392SL99Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | SI1413EDH-T1-E3 vs FDC6392SL99Z |
FDC6392S | onsemi | Check for Price | P-Channel PowerTrench® MOSFET and Integrated Schottky Diode 20V -2.2A, 150mΩ, SSOT 6L, 3000-REEL | SI1413EDH-T1-E3 vs FDC6392S |