Transistors
SGH13N60UFD
Description: Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN

Overview of SGH13N60UFD by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

CAD Models for SGH13N60UFD by Fairchild Semiconductor Corporation
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Part Data Attributes for SGH13N60UFD by Fairchild Semiconductor Corporation

SGH13N60UFD
Fairchild Semiconductor Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-3P
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
2
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Collector Current-Max (IC)
13 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf)
220 ns
Gate-Emitter Thr Voltage-Max
7.5 V
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
60 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
160 ns
Turn-on Time-Nom (ton)
41 ns
Want to compare parts?
  1. SGH13N60UFD
    Fairchild Semiconductor Corporation
    Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
    VS

Alternate Parts for SGH13N60UFD

This table gives cross-reference parts and alternative options found for SGH13N60UFD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGH13N60UFD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRGBC40U Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier SGH13N60UFD vs IRGBC40U
APT35GN120SG Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc SGH13N60UFD vs APT35GN120SG
IXGH38N60 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation SGH13N60UFD vs IXGH38N60
HGTG40N60B3 600V, PT IGBT, 450-TUBE onsemi SGH13N60UFD vs HGTG40N60B3
STGW20NB60KD 40A, 600V, N-CHANNEL IGBT, TO-247AC, TO-247, 3 PIN STMicroelectronics SGH13N60UFD vs STGW20NB60KD
IXGH36N60A3 Insulated Gate Bipolar Transistor, Littelfuse Inc SGH13N60UFD vs IXGH36N60A3
IRG4PC40UD-E Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN Infineon Technologies AG SGH13N60UFD vs IRG4PC40UD-E
APT75GL60BN 75A, 600V, N-CHANNEL IGBT, TO-247 Microsemi Corporation SGH13N60UFD vs APT75GL60BN
IRGBC40F Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier SGH13N60UFD vs IRGBC40F
IGP20N65H5XKSA1 Insulated Gate Bipolar Transistor, 42A I(C), 650V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Infineon Technologies AG SGH13N60UFD vs IGP20N65H5XKSA1

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