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SGH10N60RUFDTU by:

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN

Part Details for SGH10N60RUFDTU by Fairchild Semiconductor Corporation

Overview of SGH10N60RUFDTU by Fairchild Semiconductor Corporation

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Price & Stock for SGH10N60RUFDTU

Part # Distributor Description Stock Price Buy
DISTI # 2156-SGH10N60RUFDTU-ND
DigiKey IGBT, 16A, 600V, N-CHANNEL Min Qty: 132 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 102414
In Stock
  • 132 $2.2800
$2.2800 Buy Now
Rochester Electronics SGH10N60RUFD - Insulated Gate Bipolar Transistor, 16A, 600V, N-Channel RoHS: Compliant Status: Obsolete Min Qty: 1 69726
  • 1 $2.1900
  • 25 $2.1500
  • 100 $2.0600
  • 500 $1.9700
  • 1,000 $1.8600
$1.8600 / $2.1900 Buy Now

Part Details for SGH10N60RUFDTU

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SGH10N60RUFDTU Part Data Attributes

SGH10N60RUFDTU Fairchild Semiconductor Corporation
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SGH10N60RUFDTU Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-3PN
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Manufacturer Package Code 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Collector Current-Max (IC) 16 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 220 ns
Gate-Emitter Thr Voltage-Max 8 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 284 ns
Turn-on Time-Nom (ton) 49 ns

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