SG2012J/DESC
Description: Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon,

Overview of SG2012J/DESC by Linfinity Microelectronics

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Security and Surveillance Medical Imaging

Available Datasheets

Part # Manufacturer Description Datasheet
5962-9095502MRA Analog Devices DESC AD640TD/883B IC(new test
5962-9095502M2A Analog Devices DESC-AD640TE/883B IC(new test
LTC3525DESC6-3.3#TRMPBF Analog Devices 400mA uP Sync Boost DC/DC Conv

CAD Models for SG2012J/DESC by Linfinity Microelectronics
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Part Data Attributes for SG2012J/DESC by Linfinity Microelectronics

SG2012J/DESC
Linfinity Microelectronics
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
LINFINITY MICROELECTRONICS
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE
Collector Current-Max (IC)
0.6 A
Collector-Emitter Voltage-Max
50 V
Configuration
7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
JESD-30 Code
R-CDIP-T16
Number of Elements
7
Number of Terminals
16
Operating Temperature-Max
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
IN-LINE
Polarity/Channel Type
NPN
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
VCEsat-Max
1.9 V
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  1. SG2012J/DESC
    Linfinity Microelectronics
    Small Signal Bipolar Transistor, 0.6A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon,
    VS

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