Part Details for SDF1NA60JDASGD1N by Solitron Devices Inc
Overview of SDF1NA60JDASGD1N by Solitron Devices Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SDF1NA60JDASGD1N
SDF1NA60JDASGD1N CAD Models
SDF1NA60JDASGD1N Part Data Attributes
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SDF1NA60JDASGD1N
Solitron Devices Inc
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Datasheet
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SDF1NA60JDASGD1N
Solitron Devices Inc
Power Field-Effect Transistor, 1.5A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SOLITRON DEVICES INC | |
| Package Description | FLANGE MOUNT, R-MSFM-P3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Date Of Intro | 1993-10-01 | |
| Additional Feature | HIGH RELIABILITY | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 1.5 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 50 pF | |
| JESD-30 Code | R-MSFM-P3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 50 W | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 125 ns | |
| Turn-on Time-Max (ton) | 30 ns |
Alternate Parts for SDF1NA60JDASGD1N
This table gives cross-reference parts and alternative options found for SDF1NA60JDASGD1N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SDF1NA60JDASGD1N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SDF1NA60JAASHSN | Power Field-Effect Transistor, 1.5A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Solitron Devices Inc | SDF1NA60JDASGD1N vs SDF1NA60JAASHSN |
| SDF1NA60JAAEHD1B | Power Field-Effect Transistor, 1.5A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF1NA60JDASGD1N vs SDF1NA60JAAEHD1B |
| SDF1NA60JAASGD1Z | Power Field-Effect Transistor, 1.5A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Solitron Devices Inc | SDF1NA60JDASGD1N vs SDF1NA60JAASGD1Z |
| SDF1NA60JDAVHSN | Power Field-Effect Transistor, 1.5A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Solitron Devices Inc | SDF1NA60JDASGD1N vs SDF1NA60JDAVHSN |
| SDF1NA60JABSHSN | Power Field-Effect Transistor, 1.5A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF1NA60JDASGD1N vs SDF1NA60JABSHSN |
| SDF1NA60JABXHU1Z | Power Field-Effect Transistor, 1.5A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Solitron Devices Inc | SDF1NA60JDASGD1N vs SDF1NA60JABXHU1Z |
| SDF1NA60JABSGU1N | Power Field-Effect Transistor, 1.5A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF1NA60JDASGD1N vs SDF1NA60JABSGU1N |
| SDF1NA60JDAXGSZ | Power Field-Effect Transistor, 1.5A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257, | Solitron Devices Inc | SDF1NA60JDASGD1N vs SDF1NA60JDAXGSZ |
| SDF1NA60JDASGD1Z | Power Field-Effect Transistor, 1.5A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257, | Solitron Devices Inc | SDF1NA60JDASGD1N vs SDF1NA60JDASGD1Z |
| SDF1NA60JDAEHU1N | Power Field-Effect Transistor, 1.5A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Solitron Devices Inc | SDF1NA60JDASGD1N vs SDF1NA60JDAEHU1N |