Datasheets
SCTWA10N120 by: STMicroelectronics

Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package

Part Details for SCTWA10N120 by STMicroelectronics

Overview of SCTWA10N120 by STMicroelectronics

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Applications Space Technology Internet of Things (IoT) Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing Communication and Networking Robotics and Drones

Price & Stock for SCTWA10N120

Part # Distributor Description Stock Price Buy
DISTI # SCTWA10N120-ND
DigiKey IC POWER MOSFET 1200V HIP247 Min Qty: 1 Lead time: 52 Weeks Container: Tube 499
In Stock
  • 1 $11.0400
  • 10 $10.1420
  • 30 $9.7217
  • 120 $8.5657
  • 270 $8.1453
$8.1453 / $11.0400 Buy Now
DISTI # SCTWA10N120
Avnet Americas PTD WBG & POWER RF - Bulk (Alt: SCTWA10N120) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Container: Bulk 0
RFQ
STMicroelectronics Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package RoHS: Compliant Min Qty: 1 10
  • 1 $10.8200
  • 10 $9.7100
  • 25 $9.3900
  • 50 $9.1000
  • 100 $8.3100
  • 250 $7.9900
$7.9900 / $10.8200 Buy Now
DISTI # 54690313
Verical Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin HIP-247 Tube RoHS: Compliant Min Qty: 4 Package Multiple: 1 Americas - 113
  • 4 $8.9625
  • 10 $8.0500
  • 50 $7.8875
  • 100 $7.5875
$7.5875 / $8.9625 Buy Now
DISTI # SCTWA10N120
TME Transistor: N-MOSFET, unipolar Min Qty: 1 0
  • 1 $13.0100
  • 3 $12.2500
  • 10 $10.8400
  • 30 $9.7500
  • 120 $9.1000
  • 300 $8.7800
  • 900 $8.4500
  • 1,800 $8.1900
$8.1900 / $13.0100 RFQ
DISTI # SCTWA10N120
Avnet Silica PTD WBG & POWER RF (Alt: SCTWA10N120) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 53 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S730201268186
Chip1Stop Silicon carbide Power MOSFET: 12 A, 1200 V, 550 mΩ (typ., TJ=150 °C), N-channel in an HiP247™ long leads RoHS: Compliant pbFree: Yes Container: Bulk 113
  • 1 $5.4700
  • 10 $4.6300
  • 50 $4.3200
  • 100 $4.1600
$4.1600 / $5.4700 Buy Now
DISTI # SCTWA10N120
EBV Elektronik PTD WBG & POWER RF (Alt: SCTWA10N120) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 53 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SCTWA10N120

SCTWA10N120 CAD Models

SCTWA10N120 Part Data Attributes

SCTWA10N120 STMicroelectronics
Buy Now Datasheet
Compare Parts:
SCTWA10N120 STMicroelectronics Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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