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Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SCTWA10N120-ND
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DigiKey | IC POWER MOSFET 1200V HIP247 Min Qty: 1 Lead time: 52 Weeks Container: Tube |
499 In Stock |
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$8.1453 / $11.0400 | Buy Now |
DISTI #
SCTWA10N120
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Avnet Americas | PTD WBG & POWER RF - Bulk (Alt: SCTWA10N120) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Container: Bulk | 0 |
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RFQ | |
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STMicroelectronics | Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package RoHS: Compliant Min Qty: 1 | 10 |
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$7.9900 / $10.8200 | Buy Now |
DISTI #
54690313
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Verical | Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin HIP-247 Tube RoHS: Compliant Min Qty: 4 Package Multiple: 1 | Americas - 113 |
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$7.5875 / $8.9625 | Buy Now |
DISTI #
SCTWA10N120
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TME | Transistor: N-MOSFET, unipolar Min Qty: 1 | 0 |
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$8.1900 / $13.0100 | RFQ |
DISTI #
SCTWA10N120
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Avnet Silica | PTD WBG & POWER RF (Alt: SCTWA10N120) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 53 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
C1S730201268186
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Chip1Stop | Silicon carbide Power MOSFET: 12 A, 1200 V, 550 mΩ (typ., TJ=150 °C), N-channel in an HiP247™ long leads RoHS: Compliant pbFree: Yes Container: Bulk | 113 |
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$4.1600 / $5.4700 | Buy Now |
DISTI #
SCTWA10N120
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EBV Elektronik | PTD WBG & POWER RF (Alt: SCTWA10N120) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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SCTWA10N120
STMicroelectronics
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Datasheet
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Compare Parts:
SCTWA10N120
STMicroelectronics
Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |