Part Details for S5227-66BQ by Hamamatsu Photonics
Overview of S5227-66BQ by Hamamatsu Photonics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
71V35761SA166BQGI | Renesas Electronics Corporation | 3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O | |
71V67803S166BQ | Renesas Electronics Corporation | 3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM | |
71V25781SA166BQ8 | Renesas Electronics Corporation | 4 MEG PBSRAM W/ FAST TC |
Part Details for S5227-66BQ
S5227-66BQ CAD Models
S5227-66BQ Part Data Attributes
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S5227-66BQ
Hamamatsu Photonics
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Datasheet
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S5227-66BQ
Hamamatsu Photonics
Optoelectronic Device, CERAMIC PACKAGE-2
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HAMAMATSU PHOTONICS KK | |
Package Description | CERAMIC PACKAGE-2 | |
Reach Compliance Code | unknown | |
HTS Code | 8541.40.80.00 | |
Configuration | SINGLE | |
Dark Current-Max | 100 nA | |
Infrared Range | NO | |
Light Current-Nom | 0.015 mA | |
Mounting Feature | THROUGH HOLE MOUNT | |
Number of Functions | 1 | |
Operating Temperature-Max | 60 °C | |
Operating Temperature-Min | -20 °C | |
Peak Wavelength | 740 nm | |
Response Time-Max | 0.000001 s | |
Reverse Breakdown Voltage-Min | 5 V | |
Reverse Voltage-Max | 5 V | |
Semiconductor Material | Silicon | |
Shape | RECTANGULAR | |
Size | 5.8 mm | |
Surface Mount | NO |