Part Details for RT1N141C by Mitsubishi Electric
Overview of RT1N141C by Mitsubishi Electric
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Part Details for RT1N141C
RT1N141C CAD Models
RT1N141C Part Data Attributes
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RT1N141C
Mitsubishi Electric
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Datasheet
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RT1N141C
Mitsubishi Electric
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 50 | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 200 MHz |