Datasheets
RGT8NS65DGC9 by: ROHM Semiconductor

Insulated Gate Bipolar Transistor, 8A I(C), 650V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN

Part Details for RGT8NS65DGC9 by ROHM Semiconductor

Results Overview of RGT8NS65DGC9 by ROHM Semiconductor

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RGT8NS65DGC9 Information

RGT8NS65DGC9 by ROHM Semiconductor is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for RGT8NS65DGC9

Part # Distributor Description Stock Price Buy
DISTI # 10AH0569
Newark Igbt, 650V, 8A, 175Deg C, 65W, Dc Collector Current:8A, Collector Emitter Saturation Voltage Vce(O... n):1.65V, Power Dissipation Pd:65W, Collector Emitter Voltage V(Br)Ceo:650V, Transistor Case Style:To-262, No. Of Pins:3Pins, Operatingrohs Compliant: Yes |Rohm RGT8NS65DGC9 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $1.5000
  • 10 $1.0700
$1.0700 / $1.5000 Buy Now
DISTI # RGT8NS65DGC9-ND
DigiKey IGBT TRENCH FS 650V 8A TO-262 Min Qty: 1 Lead time: 22 Weeks Container: Tube 962
In Stock
  • 1 $1.5500
  • 50 $0.7306
  • 100 $0.6510
  • 500 $0.5112
  • 1,000 $0.4661
  • 2,000 $0.4283
  • 5,000 $0.3873
  • 10,000 $0.3675
$0.3675 / $1.5500 Buy Now
DISTI # 755-RGT8NS65DGC9
Mouser Electronics IGBTs ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high... voltage and high-current applications. more RoHS: Compliant 974
  • 1 $1.5500
  • 25 $0.9420
  • 500 $0.8750
  • 1,000 $0.8490
$0.8490 / $1.5500 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks Container: Tube 0
Tube
  • 1,000 $0.9620
  • 2,000 $0.9480
  • 3,000 $0.9400
  • 4,000 $0.9290
$0.9290 / $0.9620 Buy Now
DISTI # 86984257
Verical Trans IGBT Chip N-CH 650V 8A 65000mW 3-Pin(2+Tab) LPDS Tube RoHS: Compliant Min Qty: 33 Package Multiple: 1 Date Code: 1801 Americas - 33
  • 33 $2.2848
$2.2848 Buy Now

Part Details for RGT8NS65DGC9

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RGT8NS65DGC9 Part Data Attributes

RGT8NS65DGC9 ROHM Semiconductor
Buy Now Datasheet
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RGT8NS65DGC9 ROHM Semiconductor Insulated Gate Bipolar Transistor, 8A I(C), 650V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description TO-262, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2017-12-20
Samacsys Manufacturer ROHM Semiconductor
Samacsys Modified On 2022-11-22 05:47:17
Total Weight 1512.513
Category CO2 Kg 8.4
CO2 12705.109199999999
EU RoHS Version RoHS 2 (2015/863/EU)
EU RoHS Exemptions 7(a)
Candidate List Date 2025-01-21
SVHC Over MCV 7439-92-1
CAS Accounted for Wt 97
CA Prop 65 Presence YES
CA Prop 65 CAS Numbers 7440-02-0, 7439-92-1, 1333-86-4
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V6.10
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 20
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 158 ns
Turn-on Time-Nom (ton) 54 ns