Part Details for RFP2N08 by Harris Semiconductor
Overview of RFP2N08 by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFP2N08
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RFP2N08-ND
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DigiKey | N-CHANNEL, MOSFET Min Qty: 1110 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
3360 In Stock |
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$0.2700 | Buy Now |
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Rochester Electronics | 2A, 80V, 1.05ohm, N-Channel, MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 3360 |
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$0.2321 / $0.2730 | Buy Now |
Part Details for RFP2N08
RFP2N08 CAD Models
RFP2N08 Part Data Attributes
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RFP2N08
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFP2N08
Harris Semiconductor
Power Field-Effect Transistor, 2A I(D), 80V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 1.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 25 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 25 W | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 5 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 70 ns | |
| Turn-on Time-Max (ton) | 70 ns |
Alternate Parts for RFP2N08
This table gives cross-reference parts and alternative options found for RFP2N08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP2N08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTP4N08 | 4A, 80V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | RFP2N08 vs MTP4N08 |
| IRF511 | Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFP2N08 vs IRF511 |
| IRF513 | Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFP2N08 vs IRF513 |
| IRF511 | Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | RFP2N08 vs IRF511 |
| IRF513-001 | Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | RFP2N08 vs IRF513-001 |
| IRF511-010 | Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | RFP2N08 vs IRF511-010 |
| IRF511-006 | Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | RFP2N08 vs IRF511-006 |
| IRF513 | Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | RFP2N08 vs IRF513 |
| IRF513 | Power Field-Effect Transistor, 3.5A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | RFP2N08 vs IRF513 |