Datasheets
RFD16N06SM9A by:

16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Part Details for RFD16N06SM9A by Rochester Electronics LLC

Overview of RFD16N06SM9A by Rochester Electronics LLC

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Part Details for RFD16N06SM9A

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RFD16N06SM9A Part Data Attributes:

RFD16N06SM9A Rochester Electronics LLC
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RFD16N06SM9A Rochester Electronics LLC 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFD16N06SM9A

This table gives cross-reference parts and alternative options found for RFD16N06SM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD16N06SM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD16N06SM 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC RFD16N06SM9A vs RFD16N06SM
RFD16N06SM9A 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation RFD16N06SM9A vs RFD16N06SM9A
RFD16N06SM9A Power Field-Effect Transistor, 16A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor RFD16N06SM9A vs RFD16N06SM9A
Part Number Description Manufacturer Compare
SPD08N10 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens RFD16N06SM9A vs SPD08N10
BUK7618-55/T3 57A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 NXP Semiconductors RFD16N06SM9A vs BUK7618-55/T3
SPD23N05 Power Field-Effect Transistor, 23A I(D), 55V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens RFD16N06SM9A vs SPD23N05
934045250118 57A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 NXP Semiconductors RFD16N06SM9A vs 934045250118
SPB47N10 Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens RFD16N06SM9A vs SPB47N10
RFD16N06SM 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC RFD16N06SM9A vs RFD16N06SM
SUB85N08-08 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix RFD16N06SM9A vs SUB85N08-08
IPD50N06S2-14 50A, 55V, 0.0144ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, GREEN, PLASTIC PACKAGE-3 Rochester Electronics LLC RFD16N06SM9A vs IPD50N06S2-14
SUB70N03-09P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix RFD16N06SM9A vs SUB70N03-09P
SUD50N03-06P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix RFD16N06SM9A vs SUD50N03-06P

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