Part Details for RFD15N06LESM by Harris Semiconductor
Overview of RFD15N06LESM by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for RFD15N06LESM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RFD15N06LESM-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 701 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
4077 In Stock |
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$0.4300 | Buy Now |
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Rochester Electronics | 15A, 60V, 0.065ohm, N-Channel, POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 4077 |
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$0.3499 / $0.4117 | Buy Now |
Part Details for RFD15N06LESM
RFD15N06LESM CAD Models
RFD15N06LESM Part Data Attributes
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RFD15N06LESM
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFD15N06LESM
Harris Semiconductor
Power Field-Effect Transistor, 15A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Category CO2 Kg | 8.8 | |
| Additional Feature | ESD PROTECTED, LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 72 W | |
| Power Dissipation-Max (Abs) | 72 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 75 ns | |
| Turn-on Time-Max (ton) | 77 ns |
Alternate Parts for RFD15N06LESM
This table gives cross-reference parts and alternative options found for RFD15N06LESM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD15N06LESM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD15N06LESM9A | Power Field-Effect Transistor, 15A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | RFD15N06LESM vs RFD15N06LESM9A |
| RFD15N06LESM | 15A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD15N06LESM vs RFD15N06LESM |
| RFD15N06LESM | 15A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | RFD15N06LESM vs RFD15N06LESM |