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Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HUML2020L8, 6 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RF4E070GNTRCT-ND
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DigiKey | MOSFET N-CH 30V 7A HUML2020L8 Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2350 In Stock |
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$0.1225 / $0.4300 | Buy Now |
DISTI #
RF4E070GNTR
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Avnet Americas | 4.5V DRIVE NCH MOSFET, HUML6 PKG - Tape and Reel (Alt: RF4E070GNTR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.1254 / $0.1431 | Buy Now |
DISTI #
755-RF4E070GNTR
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Mouser Electronics | MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant | 2283 |
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$0.1220 / $0.4300 | Buy Now |
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Future Electronics | 30V, 7A, 21.4 MOHM, PQFN 2X2 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1230 / $0.1320 | Buy Now |
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Quest Components | 1640 |
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$0.2600 / $0.6500 | Buy Now | |
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Ameya Holding Limited | 30V, 7A, 21.4 MOHM, PQFN 2X2 Min Qty: 1 | 60-Authorized Distributor |
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$0.1744 / $0.2964 | Buy Now |
DISTI #
RF4E070GNTR
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Avnet Silica | 4.5V DRIVE NCH MOSFET, HUML6 PKG (Alt: RF4E070GNTR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 23 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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RF4E070GNTR
ROHM Semiconductor
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Datasheet
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Compare Parts:
RF4E070GNTR
ROHM Semiconductor
Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HUML2020L8, 6 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, HUML2020L8, 6 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 28 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for RF4E070GNTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF4E070GNTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NTTFS4930NTAG | Single N-Channel Power MOSFET 30V, 23A, 23mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL | onsemi | RF4E070GNTR vs NTTFS4930NTAG |
CSD17571Q2 | 30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm 6-WSON -55 to 150 | Texas Instruments | RF4E070GNTR vs CSD17571Q2 |