Part Details for RF1S630SM by Harris Semiconductor
Overview of RF1S630SM by Harris Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RF1S630SM
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RF1S630SM-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 290 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2098 In Stock |
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$1.0400 | Buy Now |
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Bristol Electronics | 30 |
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RFQ | ||
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Quest Components | 24 |
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$3.0030 / $4.0950 | Buy Now | |
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Rochester Electronics | 9A, 200V, 0.400 OHM, N-Channel POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 2098 |
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$0.8896 / $1.0500 | Buy Now |
Part Details for RF1S630SM
RF1S630SM CAD Models
RF1S630SM Part Data Attributes:
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RF1S630SM
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RF1S630SM
Harris Semiconductor
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for RF1S630SM
This table gives cross-reference parts and alternative options found for RF1S630SM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1S630SM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RF1S630SM | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | RF1S630SM vs RF1S630SM |
RF1S630SM9A | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Harris Semiconductor | RF1S630SM vs RF1S630SM9A |
RF1S630SM9A | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | RF1S630SM vs RF1S630SM9A |