Part Details for RD02MUS1-101 by Mitsubishi Electric
Overview of RD02MUS1-101 by Mitsubishi Electric
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RD02MUS1-101
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 8 |
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$5.8240 / $8.9600 | Buy Now |
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Quest Components | RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 6 |
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$6.0000 / $12.0000 | Buy Now |
Part Details for RD02MUS1-101
RD02MUS1-101 CAD Models
RD02MUS1-101 Part Data Attributes
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RD02MUS1-101
Mitsubishi Electric
Buy Now
Datasheet
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Compare Parts:
RD02MUS1-101
Mitsubishi Electric
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | CHIP CARRIER, R-XQCC-N3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 1.5 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-XQCC-N3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 21.9 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | QUAD | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for RD02MUS1-101
This table gives cross-reference parts and alternative options found for RD02MUS1-101. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RD02MUS1-101, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RD02MUS1B-101 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | Mitsubishi Electric | RD02MUS1-101 vs RD02MUS1B-101 |
RD02MUS1 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10 | Mitsubishi Electric | RD02MUS1-101 vs RD02MUS1 |
RD02MUS2 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 3 PIN | Mitsubishi Electric | RD02MUS1-101 vs RD02MUS2 |