-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
PSMN4R0-40YS - N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET@en-us SOIC 4-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
AD1940YSTZRL | Analog Devices | SigmaDSP Multichannel 28B Audi | |
AD1940YSTZ | Analog Devices | SigmaDSP Multichannel 28B Audi |
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
62R9339
|
Newark | Mosfet Transistor, N Channel, 100 A, 40 V, 3.2 Mohm, 10 V, 3 V Rohs Compliant: Yes |Nexperia PSMN4R0-40YS,115 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 38716 |
|
$0.3990 / $0.5610 | Buy Now |
DISTI #
1727-4273-1-ND
|
DigiKey | MOSFET N-CH 40V 100A LFPAK56 Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
65508 In Stock |
|
$0.4835 / $1.8800 | Buy Now |
DISTI #
PSMN4R0-40YS,115
|
Avnet Americas | Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN4R0-40YS,115) Min Qty: 3000 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$0.3463 | Buy Now |
DISTI #
771-PSMN4R0-40YS,115
|
Mouser Electronics | MOSFETs PSMN4R0-40YS/SOT669/LFPAK RoHS: Compliant | 53611 |
|
$0.4080 / $0.9600 | Buy Now |
|
Future Electronics | PSMN4R0 Series 40 V 4.2 mOhm 38 nC SMT N-Channel Logic Level MOSFET - LFPAK-4 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 1500 Lead time: 13 Weeks Container: Reel | 0Reel |
|
$0.3800 / $0.4050 | Buy Now |
|
Future Electronics | PSMN4R0 Series 40 V 4.2 mOhm 38 nC SMT N-Channel Logic Level MOSFET - LFPAK-4 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 1500 Lead time: 13 Weeks Container: Reel | 0Reel |
|
$0.3800 / $0.4050 | Buy Now |
DISTI #
PSMN4R0-40YS
|
TME | Transistor: N-MOSFET, unipolar, 40V, 83A, Idm: 472A, 106W Min Qty: 1 | 748 |
|
$0.5920 / $0.8600 | Buy Now |
DISTI #
PSMN4R0-40YS.115
|
TME | Transistor: N-MOSFET, unipolar, 40V, 83A, Idm: 472A, 106W Min Qty: 1 | 0 |
|
$0.7800 / $1.1700 | RFQ |
DISTI #
PSMN4R0-40YS,115
|
Avnet Asia | Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN4R0-40YS,115) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days | 4500 |
|
$0.3913 / $0.4250 | Buy Now |
DISTI #
PSMN4R0-40YS,115
|
Avnet Silica | Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN4R0-40YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days | Silica - 1500 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
PSMN4R0-40YS,115
Nexperia
Buy Now
Datasheet
|
Compare Parts:
PSMN4R0-40YS,115
Nexperia
PSMN4R0-40YS - N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET@en-us SOIC 4-Pin
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | SOIC | |
Package Description | SMALL OUTLINE, R-PSSO-G4 | |
Pin Count | 4 | |
Manufacturer Package Code | SOT669 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 77 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0042 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-235 | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 472 A | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |