PSMN2R8-40BS
Description: Power Field-Effect Transistor

Overview of PSMN2R8-40BS by Nexperia

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy

Available Datasheets

Part # Manufacturer Description Datasheet
TPS82740BSIPR Texas Instruments 200-mA Step Down Converter Module with 360nA Iq 9-uSiP -40 to 85

CAD Models for PSMN2R8-40BS by Nexperia
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Part Data Attributes for PSMN2R8-40BS by Nexperia

PSMN2R8-40BS
Nexperia
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NEXPERIA
Package Description
D2PAK-3/2
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Date Of Intro
2017-02-01
Samacsys Manufacturer
Nexperia
Avalanche Energy Rating (Eas)
407 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
Drain Current-Max (ID)
100 A
Drain-source On Resistance-Max
0.0029 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
797 A
Reference Standard
IEC-60134
Surface Mount
YES
Terminal Finish
TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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