Datasheets
PSMN017-60YS by:

44A, 60V, 0.0157ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4

Part Details for PSMN017-60YS by NXP Semiconductors

Overview of PSMN017-60YS by NXP Semiconductors

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for PSMN017-60YS

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PSMN017-60YS Part Data Attributes

PSMN017-60YS NXP Semiconductors
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PSMN017-60YS NXP Semiconductors 44A, 60V, 0.0157ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PSSO-G4
Pin Count 235
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.0157 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 174 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PSMN017-60YS

This table gives cross-reference parts and alternative options found for PSMN017-60YS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN017-60YS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PSMN3R3-40YS 100A, 40V, 0.0033ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4 NXP Semiconductors PSMN017-60YS vs PSMN3R3-40YS
PH1955L,115 PH1955L - N-channel TrenchMOS logic level FET@en-us SOIC 4-Pin Nexperia PSMN017-60YS vs PH1955L,115
PSMN020-100YS TRANSISTOR 43 A, 100 V, 0.0205 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PSMN017-60YS vs PSMN020-100YS
PH1955L Power Field-Effect Transistor Nexperia PSMN017-60YS vs PH1955L
PH20100S,115 PH20100S - N-channel TrenchMOS standard level FET SOIC 4-Pin NXP Semiconductors PSMN017-60YS vs PH20100S,115
PSMN3R3-40YS Power Field-Effect Transistor Nexperia PSMN017-60YS vs PSMN3R3-40YS
PSMN020-100YS Power Field-Effect Transistor, 43A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 Nexperia PSMN017-60YS vs PSMN020-100YS
PHM30NQ10T TRANSISTOR 37.6 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 X 0.85, PLASTIC, SOT-685-1, QLPAK, HVSON-8, FET General Purpose Power NXP Semiconductors PSMN017-60YS vs PHM30NQ10T
PHM25NQ10T,518 PHM25NQ10T NXP Semiconductors PSMN017-60YS vs PHM25NQ10T,518
PSMN8R5-60YS TRANSISTOR 76 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power NXP Semiconductors PSMN017-60YS vs PSMN8R5-60YS

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