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Transistors / Power Field-Effect Transistors / PSMN009-100B,118
Datasheets
PSMN009-100B,118 by:

N-channel TrenchMOS SiliconMAX standard level FET@en-us D2PAK 3-Pin

Part Details for PSMN009-100B,118 by Nexperia

Overview of PSMN009-100B,118 by Nexperia

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Price & Stock for PSMN009-100B,118

Part # Distributor Description Stock Price Buy
DISTI # 29AK4072
Newark Mosfet Rohs Compliant: Yes |Nexperia PSMN009-100B,118 Min Qty: 4800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 4,800 $1.5700
$1.5700 Buy Now
DISTI # 2156-PSMN009-100B,118-1727-ND
DigiKey NEXPERIA PSMN009-100B - 75A, 100 Min Qty: 241 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 3762
In Stock
  • 241 $1.2500
$1.2500 Buy Now
DISTI # 1727-5268-1-ND
DigiKey MOSFET N-CH 100V 75A D2PAK Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $2.8700
  • 4,800 $1.2445
$1.2445 / $2.8700 Buy Now
DISTI # PSMN009-100B,118
Avnet Americas Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN009-100B,118) Min Qty: 4800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.4246
  • 6,400 $1.3861
  • 11,200 $1.3476
  • 24,000 $1.3091
  • 48,000 $1.2706
  • 240,000 $1.2321
  • 480,000 $1.1936
$1.1936 / $1.4246 Buy Now
DISTI # 771-PSMN009-100B118
Mouser Electronics MOSFET PSMN009-100B/SOT404/D2PAK RoHS: Compliant 0
  • 800 $1.2400
  • 4,800 $1.2400
$1.2400 Order Now
Future Electronics PSMN009-100B/D2PAK/REEL13// RoHS: Exempt pbFree: No Min Qty: 4800 Package Multiple: 800 Lead time: 13 Weeks 0
  • 4,800 $1.2700
$1.2700 Buy Now
Rochester Electronics PSMN009-100B - 75A, 100V, 0.0088ohm, N-Channel Power MOSFET, D2PAK RoHS: Compliant Status: Active Min Qty: 1 3762
  • 1 $1.2600
  • 25 $1.2400
  • 100 $1.1900
  • 500 $1.1400
  • 1,000 $1.0700
$1.0700 / $1.2600 Buy Now
DISTI # PSMN009-100B.118
TME Transistor: N-MOSFET, unipolar, 100V, 75A, Idm: 400A, 230W Min Qty: 1 0
  • 1 $2.5300
  • 5 $2.2800
  • 25 $2.0200
  • 100 $1.8100
  • 800 $1.6900
$1.6900 / $2.5300 RFQ
DISTI # PSMN009-100B,118
Avnet Silica Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN009-100B,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # PSMN009-100B,118
EBV Elektronik Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN009-100B,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for PSMN009-100B,118

PSMN009-100B,118 CAD Models

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PSMN009-100B,118 Part Data Attributes

Parametric Data
PSMN009-100B,118 Nexperia
Buy Now Datasheet
Compare Parts:
PSMN009-100B,118 Nexperia N-channel TrenchMOS SiliconMAX standard level FET@en-us D2PAK 3-Pin
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code D2PAK
Package Description D2PAK-3
Pin Count 3
Manufacturer Package Code SOT404
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2017-02-01
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0088 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PSMN009-100B,118

This table gives cross-reference parts and alternative options found for PSMN009-100B,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN009-100B,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFS4410 Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Infineon Technologies AG PSMN009-100B,118 vs IRFS4410
IRFS4410TRR Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 International Rectifier PSMN009-100B,118 vs IRFS4410TRR
IRFS4410PBF Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG PSMN009-100B,118 vs IRFS4410PBF
IRFS4410TRL Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 International Rectifier PSMN009-100B,118 vs IRFS4410TRL
PSMN009-100B Power Field-Effect Transistor Nexperia PSMN009-100B,118 vs PSMN009-100B
IRFS4410TRLPBF Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier PSMN009-100B,118 vs IRFS4410TRLPBF
PSMN009-100B,118 N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin NXP Semiconductors PSMN009-100B,118 vs PSMN009-100B,118
PSMN009-100B TRANSISTOR 75 A, 100 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors PSMN009-100B,118 vs PSMN009-100B
IRFS4410PBF Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier PSMN009-100B,118 vs IRFS4410PBF
Part Number Description Manufacturer Compare
IRFS4410PBF Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG PSMN009-100B,118 vs IRFS4410PBF
PSMN009-100B Power Field-Effect Transistor Nexperia PSMN009-100B,118 vs PSMN009-100B
IRFS4410 Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Infineon Technologies AG PSMN009-100B,118 vs IRFS4410
PSMN009-100B TRANSISTOR 75 A, 100 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors PSMN009-100B,118 vs PSMN009-100B
PSMN009-100B,118 N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin NXP Semiconductors PSMN009-100B,118 vs PSMN009-100B,118

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