|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
NXP SEMICONDUCTORS
|
|
Part Package Code
|
SOT-23
|
|
Package Description
|
PLASTIC PACKAGE-3
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.21.00
|
|
Samacsys Manufacturer
|
NXP
|
|
Additional Feature
|
LOW NOISE
|
|
Configuration
|
SINGLE
|
|
DS Breakdown Voltage-Min
|
25 V
|
|
FET Technology
|
JUNCTION
|
|
Feedback Cap-Max (Crss)
|
2.5 pF
|
|
Highest Frequency Band
|
VERY HIGH FREQUENCY BAND
|
|
JEDEC-95 Code
|
TO-236AB
|
|
JESD-30 Code
|
R-PDSO-G3
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
DEPLETION MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
0.25 W
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
TIN
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
AMPLIFIER
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 934008990215 | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, SMD, SST3, 3 PIN, FET RF Small Signal | NXP Semiconductors | PMBFJ309 vs 934008990215 |
| PMBFJ309TRL | RF Small Signal Field-Effect Transistor, 1-Element, Silicon | YAGEO Corporation | PMBFJ309 vs PMBFJ309TRL |
| PMBFJ309-T | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal | NXP Semiconductors | PMBFJ309 vs PMBFJ309-T |
| PMBFJ309T/R | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal | NXP Semiconductors | PMBFJ309 vs PMBFJ309T/R |
