Part Details for PHP12N10E by NXP Semiconductors
Overview of PHP12N10E by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for PHP12N10E
PHP12N10E CAD Models
PHP12N10E Part Data Attributes
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PHP12N10E
NXP Semiconductors
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Datasheet
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PHP12N10E
NXP Semiconductors
TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 70 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.16 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 100 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 75 W | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 56 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 145 ns | |
Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for PHP12N10E
This table gives cross-reference parts and alternative options found for PHP12N10E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHP12N10E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PHP44N06LT | TRANSISTOR 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | PHP12N10E vs PHP44N06LT |
PSMN4R6-60PS | Power Field-Effect Transistor | Nexperia | PHP12N10E vs PSMN4R6-60PS |
BUK574-60H | TRANSISTOR 20 A, 60 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | PHP12N10E vs BUK574-60H |
BUZ11L | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | PHP12N10E vs BUZ11L |
PHX3N50E | TRANSISTOR 2.1 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, FULL PACK-3, FET General Purpose Power | NXP Semiconductors | PHP12N10E vs PHX3N50E |
BUK7508-55 | TRANSISTOR 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | PHP12N10E vs BUK7508-55 |
BFC50 | Power Field-Effect Transistor, 23A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | TT Electronics Resistors | PHP12N10E vs BFC50 |
2SK2914 | TRANSISTOR 7.5 A, 250 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 2-10P1B, SC-46, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | PHP12N10E vs 2SK2914 |
APT20M60BNFR | Power Field-Effect Transistor, 50A I(D), 200V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Advanced Power Technology | PHP12N10E vs APT20M60BNFR |
APT4025BN | Power Field-Effect Transistor, 23A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Advanced Power Technology | PHP12N10E vs APT4025BN |