Part Details for PHP12N10E by NXP Semiconductors
Results Overview of PHP12N10E by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PHP12N10E Information
PHP12N10E by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for PHP12N10E
PHP12N10E CAD Models
PHP12N10E Part Data Attributes
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PHP12N10E
NXP Semiconductors
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Datasheet
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PHP12N10E
NXP Semiconductors
TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 70 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 100 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 145 ns | |
| Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for PHP12N10E
This table gives cross-reference parts and alternative options found for PHP12N10E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHP12N10E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUK474-60H | NXP Semiconductors | Check for Price | TRANSISTOR 21 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | PHP12N10E vs BUK474-60H |
| PHP60N06LT127 | NXP Semiconductors | Check for Price | TRANSISTOR 58 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | PHP12N10E vs PHP60N06LT127 |
| BUK754R0-55B | Nexperia | Check for Price | Power Field-Effect Transistor | PHP12N10E vs BUK754R0-55B |
| BUK574-60H | NXP Semiconductors | Check for Price | TRANSISTOR 20 A, 60 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | PHP12N10E vs BUK574-60H |
| IRL1404ZLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | PHP12N10E vs IRL1404ZLPBF |
| APT6039BNR | Microsemi Corporation | Check for Price | 17A, 600V, 0.39ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | PHP12N10E vs APT6039BNR |
| PHP33N10 | NXP Semiconductors | Check for Price | TRANSISTOR 34 A, 100 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | PHP12N10E vs PHP33N10 |
| APT1001RBNR | Advanced Power Technology | Check for Price | Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | PHP12N10E vs APT1001RBNR |
| BUK455-60H | NXP Semiconductors | Check for Price | TRANSISTOR 43 A, 60 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | PHP12N10E vs BUK455-60H |
| APT5030BNR | Advanced Power Technology | Check for Price | Power Field-Effect Transistor, 21A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | PHP12N10E vs APT5030BNR |