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Power Bipolar Transistor
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70R7415
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Newark | Npn Power Transistor, 400 V, 1.5 A, 3-To-92, Transistor Polarity:Npn, Collector Emitter Voltage Max:400V, Continuous Collector Current:1.5A, Power Dissipation:2.1W, Transistor Mounting:Through Hole, No. Of Pins:3Pins, Product Range:-Rohs Compliant: Yes |Ween Semiconductors PHD13003C,126 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 3369 |
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$0.0620 | Buy Now |
DISTI #
PHD13003C,126-ND
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DigiKey | TRANS NPN 400V 1.5A TO92-3 Min Qty: 10000 Lead time: 20 Weeks Container: Tape & Box (TB) | Temporarily Out of Stock |
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$0.0697 / $0.0844 | Buy Now |
DISTI #
771-PHD13003C126
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Mouser Electronics | Bipolar Transistors - BJT H-VOLT PWR BPT 700V 2 A RoHS: Compliant | 9977 |
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$0.0680 / $0.4500 | Buy Now |
DISTI #
PHD13003C,126
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Avnet Silica | Bipolar (BJT) Single Transistor, NPN, 400 V, 1.5 A, 2.1 W, TO-92, Through Hole (Alt: PHD13003C,126) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 1 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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PHD13003C,126
WeEn Semiconductor Co Ltd
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Datasheet
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PHD13003C,126
WeEn Semiconductor Co Ltd
Power Bipolar Transistor
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | WEEN SEMICONDUCTORS CO LTD | |
Package Description | SOT-54, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 36 Weeks | |
Samacsys Manufacturer | WeEn Semiconductors | |
Collector Current-Max (IC) | 1.5 A | |
Collector-Emitter Voltage-Max | 400 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DC Current Gain-Min (hFE) | 5 | |
Fall Time-Max (tf) | 700 ns | |
JEDEC-95 Code | TO-92 | |
JESD-30 Code | O-PBCY-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 2.1 W | |
Reference Standard | IEC-60134 | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 4700 ns | |
Turn-on Time-Max (ton) | 1000 ns | |
VCEsat-Max | 1.5 V |