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PDTA114EMB - 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ@en-us DFN 3-Pin
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1727-PDTA114EMB,315CT-ND
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DigiKey | TRANS PREBIAS PNP 50V 0.1A 3DFN Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
14950 In Stock |
|
$0.0257 / $0.1600 | Buy Now |
DISTI #
PDTA114EMB,315
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Avnet Americas | Trans Digital BJT PNP 50V 100mA 3-Pin DFN T/R - Tape and Reel (Alt: PDTA114EMB,315) RoHS: Compliant Min Qty: 30000 Package Multiple: 10000 Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
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$0.0244 | Buy Now |
DISTI #
771-PDTA114EMB,315
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Mouser Electronics | Digital Transistors PDTA114EMB/SOT883B/XQFN3 RoHS: Compliant | 8973 |
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$0.0260 / $0.1600 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 30000 Package Multiple: 10000 Lead time: 6 Weeks | 0 |
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$0.0272 | Buy Now |
DISTI #
PDTA114EMB,315
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Avnet Silica | Trans Digital BJT PNP 50V 100mA 3-Pin DFN T/R (Alt: PDTA114EMB,315) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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PDTA114EMB,315
Nexperia
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Datasheet
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PDTA114EMB,315
Nexperia
PDTA114EMB - 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ@en-us DFN 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | DFN | |
Package Description | DFN1006B-3, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT883B | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 6 Weeks | |
Samacsys Manufacturer | Nexperia | |
Samacsys Modified On | 2022-06-22 21:39:32 | |
Total Weight | 0.71062 | |
Category CO2 Kg | 8.8 | |
CO2 | 6.253456000000001 | |
EU RoHS Version | RoHS 2 (2015/863/EU) | |
Candidate List Date | 2024-01-23 | |
CAS Accounted for Wt | 97 | |
CA Prop 65 Presence | YES | |
CA Prop 65 CAS Numbers | 7440-02-0, 1333-86-4, 7439-92-1 | |
EFUP | e | |
Conflict Mineral Status | DRC Conflict Free | |
Conflict Mineral Status Source | CMRT V6.40 | |
Qualifications | AEC-Q101 | |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 30 | |
JESD-30 Code | R-PBCC-N3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | PNP | |
Reference Standard | AEC-Q101; IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 180 MHz |