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Part Details for PBHV8110DA-AU_R1_000A1 by PanJit Semiconductor
Overview of PBHV8110DA-AU_R1_000A1 by PanJit Semiconductor
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Price & Stock for PBHV8110DA-AU_R1_000A1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-PBHV8110DAAUR1A1
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Mouser Electronics | Bipolar Transistors - BJT NPN Low Vce(sat) Transistor RoHS: Compliant | 5904 |
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$0.0310 / $0.3200 | Buy Now |
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DISTI #
PBHV8110DA-AU-R1
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TME | Transistor: NPN, bipolar, 100V, 1A, 1.25W, SOT23 Min Qty: 10 | 3000 |
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$0.0512 / $0.0797 | Buy Now |
|
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NAC | NPN Low Vce(sat) Transistor RoHS: Compliant Min Qty: 1 Package Multiple: 3000 Container: Reel | 2600 |
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$0.0360 / $0.0400 | Buy Now |
Part Details for PBHV8110DA-AU_R1_000A1
PBHV8110DA-AU_R1_000A1 CAD Models
PBHV8110DA-AU_R1_000A1 Part Data Attributes
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PBHV8110DA-AU_R1_000A1
PanJit Semiconductor
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Datasheet
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PBHV8110DA-AU_R1_000A1
PanJit Semiconductor
Power Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Date Of Intro | 2019-10-30 | |
| Samacsys Manufacturer | PANJIT | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Base Capacitance-Max | 10 pF | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 1.25 W | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| Reference Standard | AEC-Q101; IEC-61249; MIL-STD-750 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| VCEsat-Max | 0.45 V |