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Single N-Channel Power MOSFET 40V, 378A, 0.7mΩ Power MOSFET 40V, 378A, 0.7 mOhm, Single N-Channel, SO8-FL, WF, 1500-REEL, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
81AJ0305
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Newark | T6-40V N 0.7 Mohms Sl/ Reel |Onsemi NVMFS5C404NWFET1G Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.7600 | Buy Now |
DISTI #
488-NVMFS5C404NWFET1GCT-ND
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DigiKey | T6-40V N 0.7 MOHMS SL Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1500 In Stock |
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$2.6952 / $5.5400 | Buy Now |
DISTI #
NVMFS5C404NWFET1G
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Avnet Americas | Transistor MOSFET N-CH 40V 378A 8-Pin SO-8FL T/R - Tape and Reel (Alt: NVMFS5C404NWFET1G) RoHS: Not Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 22 Weeks, 0 Days Container: Reel | 2322000 Factory Stock |
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$2.5651 / $3.0615 | Buy Now |
DISTI #
863-VMFS5C404NWFET1G
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Mouser Electronics | MOSFET Single N-Channel Power MOSFET 40V, 378A, 0.7mohm Power MOSFET 40V, 378A, 0.7 mOhm, Single N-Channel, SO8-FL, WF RoHS: Compliant | 0 |
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$3.1000 | Order Now |
DISTI #
NVMFS5C404NWFET1G
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Avnet Silica | Transistor MOSFET N-CH 40V 378A 8-Pin SO-8FL T/R (Alt: NVMFS5C404NWFET1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 23 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Flip Electronics | Stock | 2334000 |
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RFQ |
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NVMFS5C404NWFET1G
onsemi
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Datasheet
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NVMFS5C404NWFET1G
onsemi
Single N-Channel Power MOSFET 40V, 378A, 0.7mΩ Power MOSFET 40V, 378A, 0.7 mOhm, Single N-Channel, SO8-FL, WF, 1500-REEL, Automotive Qualified
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SO-8FL, DFNW5, 6 PIN | |
Manufacturer Package Code | 507BA | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 907 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 378 A | |
Drain-source On Resistance-Max | 0.0007 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 120 pF | |
JESD-30 Code | R-PDSO-F6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Pulsed Drain Current-Max (IDM) | 900 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |