Part Details for NTLJS4159NT1G by onsemi
Overview of NTLJS4159NT1G by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NTLJS4159NT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
74AK1001
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Newark | Ntljs4159Nt1G, Single Mosfets |Onsemi NTLJS4159NT1G Min Qty: 1890 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.1740 / $0.2210 | Buy Now |
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Rochester Electronics | NTLJS4159N - 3.6A, 30V, 0.045ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 3000 |
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$0.1644 / $0.1934 | Buy Now |
Part Details for NTLJS4159NT1G
NTLJS4159NT1G CAD Models
NTLJS4159NT1G Part Data Attributes
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NTLJS4159NT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTLJS4159NT1G
onsemi
Power MOSFET 30V 7.8 A 35 mOhm Single N-Channel WDFN6, WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch | |
| Package Description | 2 X 2 MM, LEAD FREE, CASE 506AP-01, WDFN6, 6 PIN | |
| Pin Count | 6 | |
| Manufacturer Package Code | 506AP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 3.6 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |