There are no models available for this part yet.
Overview of NTGD4169FT1G by onsemi
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for NTGD4169FT1G by onsemi
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
74AK0939
|
Newark | Ntgd4169Ft1G, Single Mosfets |Onsemi NTGD4169FT1G RoHS: Not Compliant Min Qty: 2290 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.1430 / $0.1820 | Buy Now | |
DISTI #
NTGD4169FT1G
|
Avnet Americas | - Tape and Reel (Alt: NTGD4169FT1G) RoHS: Compliant Min Qty: 2290 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 185907 Partner Stock |
|
$0.1354 / $0.1616 | Buy Now | |
Rochester Electronics | NTGD4169F - Small Signal Field-Effect Transistor, 2.6A, 30V, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 185907 |
|
$0.1354 / $0.1593 | Buy Now |
CAD Models for NTGD4169FT1G by onsemi
Part Data Attributes for NTGD4169FT1G by onsemi
|
|
---|---|
Pbfree Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
ONSEMI
|
Part Package Code
|
TSOP-6
|
Package Description
|
TSOP-6
|
Pin Count
|
6
|
Manufacturer Package Code
|
318G-02
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
4 Weeks
|
Samacsys Manufacturer
|
onsemi
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
30 V
|
Drain Current-Max (ID)
|
2.6 A
|
Drain-source On Resistance-Max
|
0.09 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PDSO-G6
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
6
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
0.9 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
Tin (Sn)
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Related Parts for NTGD4169FT1G
-
NTGS1135PT1GSmall Signal Field-Effect Transistors
-
NTHD3101FT1Power Field-Effect Transistors
-
NTE6026Rectifier Diodes
-
NTE918MOperational Amplifiers
-
NCP1117LPSTADT3GLinear Regulator ICs
-
NNCD6.8DA-T1-ATTransient Suppressors
-
NTE5204AZener Diodes
-
LSF0102DCTROther Interface ICs
-
NTE93MCPPower Bipolar Transistors