Datasheets
NTE365 by: NTE Electronics Inc

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

Part Details for NTE365 by NTE Electronics Inc

Overview of NTE365 by NTE Electronics Inc

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Applications Internet of Things (IoT) Environmental Monitoring Space Technology Industrial Automation Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Automotive Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Aerospace and Defense Healthcare Renewable Energy Electronic Manufacturing Communication and Networking Robotics and Drones

Price & Stock for NTE365

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 1 3
  • 1 $28.8000
$28.8000 Buy Now
Quest Components RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, NPN 8
  • 1 $45.0450
$45.0450 Buy Now
Quest Components RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, NPN 2
  • 1 $31.2000
$31.2000 Buy Now

Part Details for NTE365

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NTE365 Part Data Attributes:

NTE365 NTE Electronics Inc
Buy Now Datasheet
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NTE365 NTE Electronics Inc RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
Part Life Cycle Code Obsolete
Ihs Manufacturer NTE ELECTRONICS INC
Package Description FLANGE MOUNT, O-MRFM-F4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Collector Current-Max (IC) 3 A
Collector-Base Capacitance-Max 60 pF
Collector-Emitter Voltage-Max 16 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code O-MRFM-F4
Number of Elements 1
Number of Terminals 4
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 50 W
Power Dissipation-Max (Abs) 50 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for NTE365

This table gives cross-reference parts and alternative options found for NTE365. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE365, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MRF644 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc NTE365 vs MRF644
NTE366 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN NTE Electronics Inc NTE365 vs NTE366
MRF641 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc NTE365 vs MRF641
2SC2642 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power Toshiba America Electronic Components NTE365 vs 2SC2642
SD1429-3 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, 6 PIN Microsemi Corporation NTE365 vs SD1429-3
SD1429 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, M111, 6 PIN Advanced Power Technology NTE365 vs SD1429
2SC2643 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, 2-7A1A, 4 PIN, BIP RF Power Toshiba America Electronic Components NTE365 vs 2SC2643

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