Datasheets
NTE351 by: NTE Electronics Inc

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN

Part Details for NTE351 by NTE Electronics Inc

Overview of NTE351 by NTE Electronics Inc

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Applications Consumer Electronics Education and Research Industrial Automation Audio and Video Systems Electronic Manufacturing

Price & Stock for NTE351

Part # Distributor Description Stock Price Buy
Onlinecomponents.com Transistor NPN Silicon 36V IC=4A Po=25W 130-175mhz RF Power AMP 2 In Stock
  • 1 $92.1600
  • 5 $74.4500
  • 10 $73.2700
  • 25 $65.9200
  • 50 $64.9300
  • 100 $63.9500
  • 250 $60.6600
$60.6600 / $92.1600 Buy Now
Bristol Electronics   Min Qty: 1 2
  • 1 $54.0000
$54.0000 Buy Now
Quest Components RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, NPN 1
  • 1 $58.5000
$58.5000 Buy Now
DISTI # NTE351
TME Transistor: NPN, bipolar, RF, 18V, 5A, 65W, T72H, Pout: 25W Min Qty: 1 0
  • 1 $96.9000
  • 3 $87.2000
  • 10 $77.0000
  • 25 $69.2000
$69.2000 / $96.9000 RFQ
Master Electronics Transistor NPN Silicon 36V IC=4A Po=25W 130-175mhz RF Power AMP 2 In Stock
  • 1 $92.1600
  • 5 $74.4500
  • 10 $73.2700
  • 25 $65.9200
  • 50 $64.9300
  • 100 $63.9500
  • 250 $60.6600
$60.6600 / $92.1600 Buy Now

Part Details for NTE351

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NTE351 Part Data Attributes:

NTE351 NTE Electronics Inc
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NTE351 NTE Electronics Inc RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Package Description POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Collector Current-Max (IC) 5 A
Collector-Base Capacitance-Max 130 pF
Collector-Emitter Voltage-Max 18 V
Configuration SINGLE
DC Current Gain-Min (hFE) 5
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRPM-F4
Number of Elements 1
Number of Terminals 4
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style POST/STUD MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 65 W
Power Dissipation-Max (Abs) 65 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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