Part Details for NTD4909N-35G by onsemi
Overview of NTD4909N-35G by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTD4909N-35G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86135365
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Verical | Trans MOSFET N-CH 30V 12.1A 3-Pin(3+Tab) IPAK Tube Min Qty: 1916 Package Multiple: 1 Date Code: 1501 | Americas - 13725 |
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$0.1958 | Buy Now |
DISTI #
86134840
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Verical | Trans MOSFET N-CH 30V 12.1A 3-Pin(3+Tab) IPAK Tube Min Qty: 1916 Package Multiple: 1 | Americas - 5200 |
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$0.1958 | Buy Now |
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Rochester Electronics | NTD4909N - 8.8A, 30V, 0.012ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 19225 |
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$0.1566 / $0.1842 | Buy Now |
Part Details for NTD4909N-35G
NTD4909N-35G CAD Models
NTD4909N-35G Part Data Attributes
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NTD4909N-35G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTD4909N-35G
onsemi
Single N-Channel Power MOSFET 30V, 41A, 8mΩ, 3.5 mm IPAK, Straight Lead, 75-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | 3.5 mm IPAK, Straight Lead | |
Package Description | IPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 369AD | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 28 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 8.8 A | |
Drain-source On Resistance-Max | 0.012 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 29.4 W | |
Pulsed Drain Current-Max (IDM) | 167 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for NTD4909N-35G
This table gives cross-reference parts and alternative options found for NTD4909N-35G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTD4909N-35G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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NTD4909N-35G | Rochester Electronics LLC | Check for Price | 8.8A, 30V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, IPAK-3 | NTD4909N-35G vs NTD4909N-35G |