Part Details for NTBV5605T4G by onsemi
Overview of NTBV5605T4G by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTBV5605T4G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
NTBV5605T4GOSCT-ND
|
DigiKey | MOSFET P-CH 60V 18.5A D2PAK Min Qty: 1 Lead time: 35 Weeks Container: Cut Tape (CT), Digi-Reel® |
1 In Stock |
|
$1.7400 | Buy Now |
Part Details for NTBV5605T4G
NTBV5605T4G CAD Models
NTBV5605T4G Part Data Attributes
|
|
NTBV5605T4G
onsemi
Buy Now
Datasheet
|
Compare Parts:
NTBV5605T4G
onsemi
Single P-Channel Power MOSFET -60V, -18.5A, 140mΩ Power MOSFET -60V, -18.5A, 140 mOhm, Single P-Channel, D2PAK., D2PAK 2 LEAD, 800-REEL, Automotive Qualified
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | D2PAK 2 LEAD | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 418B-04 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 338 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 18.5 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 88 W | |
| Pulsed Drain Current-Max (IDM) | 55 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTBV5605T4G
This table gives cross-reference parts and alternative options found for NTBV5605T4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTBV5605T4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPB18P06PGATMA1 | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN-FREE, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | NTBV5605T4G vs SPB18P06PGATMA1 |
| SPB18P06PG | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN-FREE, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | NTBV5605T4G vs SPB18P06PG |