NT5TU64M16HG-ACH
Nanya Technology Corporation
Description: DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84

Overview of NT5TU64M16HG-ACH by Nanya Technology Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Education and Research Internet of Things (IoT) Computing and Data Storage Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Robotics and Drones

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Part Data Attributes for NT5TU64M16HG-ACH by Nanya Technology Corporation

NT5TU64M16HG-ACH
Nanya Technology Corporation
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
NANYA TECHNOLOGY CORP
Package Description
TFBGA,
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.32
Access Mode
MULTI BANK PAGE BURST
Access Time-Max
0.4 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B84
Length
12.5 mm
Memory Density
1073741824 bit
Memory IC Type
DDR2 DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
84
Number of Words
67108864 words
Number of Words Code
64000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
64MX16
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
8 mm
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  1. NT5TU64M16HG-ACH
    Nanya Technology Corporation
    DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84
    VS

Alternate Parts for NT5TU64M16HG-ACH

This table gives cross-reference parts and alternative options found for NT5TU64M16HG-ACH. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5TU64M16HG-ACH, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NT5TU64M16HG-ACL DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84 Nanya Technology Corporation NT5TU64M16HG-ACH vs NT5TU64M16HG-ACL
NT5TU64M16HG-AC DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84 Nanya Technology Corporation NT5TU64M16HG-ACH vs NT5TU64M16HG-AC
NT5TU64M16HG-ACI DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84 Nanya Technology Corporation NT5TU64M16HG-ACH vs NT5TU64M16HG-ACI
Part Number Description Manufacturer Compare
W971GG6JB-25 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 Winbond Electronics Corp NT5TU64M16HG-ACH vs W971GG6JB-25
MT47H64M16NF-25EIT:MT DDR DRAM, Micron Technology Inc NT5TU64M16HG-ACH vs MT47H64M16NF-25EIT:MT
NT5TU64M16HG-AC DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84 Nanya Technology Corporation NT5TU64M16HG-ACH vs NT5TU64M16HG-AC
MT47H64M16B7-25ELIT:D DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 10 X 16.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc NT5TU64M16HG-ACH vs MT47H64M16B7-25ELIT:D
HYB18T1G160CFL-2.5 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG NT5TU64M16HG-ACH vs HYB18T1G160CFL-2.5
K4T1G164QD-ZCE70 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor NT5TU64M16HG-ACH vs K4T1G164QD-ZCE70
K4T1G164QE-HLF70 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Samsung Semiconductor NT5TU64M16HG-ACH vs K4T1G164QE-HLF70
K4N1G164QQ-HC250 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Samsung Semiconductor NT5TU64M16HG-ACH vs K4N1G164QQ-HC250
MT47H64M16B7-25L:D DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 10 X 16.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc NT5TU64M16HG-ACH vs MT47H64M16B7-25L:D
NT5TU64M16CG-AD DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, BGA-84 Nanya Technology Corporation NT5TU64M16HG-ACH vs NT5TU64M16CG-AD

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