Part Details for NT56V1616A0T-8 by Nanya Technology Corporation
Overview of NT56V1616A0T-8 by Nanya Technology Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for NT56V1616A0T-8
NT56V1616A0T-8 CAD Models
NT56V1616A0T-8 Part Data Attributes
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NT56V1616A0T-8
Nanya Technology Corporation
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Datasheet
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NT56V1616A0T-8
Nanya Technology Corporation
Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP50,.46,32 | |
| Pin Count | 50 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 125 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G50 | |
| JESD-609 Code | e0 | |
| Length | 20.95 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP50,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.14 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for NT56V1616A0T-8
This table gives cross-reference parts and alternative options found for NT56V1616A0T-8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT56V1616A0T-8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4S161622H-TC100 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, TSOP2-50 | Samsung Semiconductor | NT56V1616A0T-8 vs K4S161622H-TC100 |
| MB81F161622B-70FN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Semiconductor Limited | NT56V1616A0T-8 vs MB81F161622B-70FN |
| MB81F161622B-75FN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Limited | NT56V1616A0T-8 vs MB81F161622B-75FN |
| MB81F161622C-80FN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Semiconductor Limited | NT56V1616A0T-8 vs MB81F161622C-80FN |
| M12L16161A-7TIG | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 | Elite Semiconductor Memory Technology Inc | NT56V1616A0T-8 vs M12L16161A-7TIG |
| UPD4516161AG5-A10-9NF | Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Elpida Memory Inc | NT56V1616A0T-8 vs UPD4516161AG5-A10-9NF |
| MB81F161622B-80FN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Limited | NT56V1616A0T-8 vs MB81F161622B-80FN |
| UPD4516161AG5-A80L-9NF | Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Elpida Memory Inc | NT56V1616A0T-8 vs UPD4516161AG5-A80L-9NF |
| MB81F161622C-80LFN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Semiconductor Limited | NT56V1616A0T-8 vs MB81F161622C-80LFN |
| MSM56V16160F-8T3-K | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-50 | OKI Electric Industry Co Ltd | NT56V1616A0T-8 vs MSM56V16160F-8T3-K |