Part Details for NT1GD64S8HB0FN-6K by Nanya Technology Corporation
Overview of NT1GD64S8HB0FN-6K by Nanya Technology Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for NT1GD64S8HB0FN-6K
NT1GD64S8HB0FN-6K CAD Models
NT1GD64S8HB0FN-6K Part Data Attributes
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NT1GD64S8HB0FN-6K
Nanya Technology Corporation
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Datasheet
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NT1GD64S8HB0FN-6K
Nanya Technology Corporation
DDR DRAM Module, 128MX64, 0.75ns, CMOS, GREEN, SODIMM-200
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | MODULE | |
| Package Description | DIMM, DIMM200,24 | |
| Pin Count | 200 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 0.75 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N200 | |
| JESD-609 Code | e4 | |
| Memory Density | 8589934592 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 200 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM200,24 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.057 A | |
| Supply Current-Max | 4.961 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 0.6 mm | |
| Terminal Position | DUAL |
Alternate Parts for NT1GD64S8HB0FN-6K
This table gives cross-reference parts and alternative options found for NT1GD64S8HB0FN-6K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT1GD64S8HB0FN-6K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M470L2923BN0-LCC | DDR DRAM Module, 128MX64, 0.65ns, CMOS, SODIMM-200 | Samsung Semiconductor | NT1GD64S8HB0FN-6K vs M470L2923BN0-LCC |
| MT16VDDF12864HY-40BF2 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, LEAD FREE, SODIMM-200 | Micron Technology Inc | NT1GD64S8HB0FN-6K vs MT16VDDF12864HY-40BF2 |
| M470L2923DV0-CB3 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | NT1GD64S8HB0FN-6K vs M470L2923DV0-CB3 |
| HYMD512M646BLFP8-D43 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | SK Hynix Inc | NT1GD64S8HB0FN-6K vs HYMD512M646BLFP8-D43 |
| M470L2923DV0-LCC | DDR DRAM Module, 128MX64, 0.65ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | NT1GD64S8HB0FN-6K vs M470L2923DV0-LCC |
| V826765G24SAJW-C0 | DDR DRAM Module, 128MX64, 0.75ns, CMOS, GREEN, SODIMM-200 | ProMOS Technologies Inc | NT1GD64S8HB0FN-6K vs V826765G24SAJW-C0 |
| HYMD512M646BLF8-D43 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 | SK Hynix Inc | NT1GD64S8HB0FN-6K vs HYMD512M646BLF8-D43 |
| M470L2923BN0-LB3 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 | Samsung Semiconductor | NT1GD64S8HB0FN-6K vs M470L2923BN0-LB3 |
| M470L2923BN0-CB3 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 | Samsung Semiconductor | NT1GD64S8HB0FN-6K vs M470L2923BN0-CB3 |
| M470L2923DV0-LB3 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | NT1GD64S8HB0FN-6K vs M470L2923DV0-LB3 |