Part Details for NP110N055PUG-E1-AY by Renesas Electronics Corporation
Overview of NP110N055PUG-E1-AY by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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NP110N055PUG-E1-AY | Renesas Electronics Corporation | Power MOSFETs for Automotive | |
NP110N055PUG-E2-AY | Renesas Electronics Corporation | Power MOSFETs for Automotive | |
NP110N055PUG-E1-AZ | Renesas Electronics Corporation | Power MOSFETs for Automotive |
Part Details for NP110N055PUG-E1-AY
NP110N055PUG-E1-AY CAD Models
NP110N055PUG-E1-AY Part Data Attributes
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NP110N055PUG-E1-AY
Renesas Electronics Corporation
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Datasheet
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NP110N055PUG-E1-AY
Renesas Electronics Corporation
Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | MP-25ZP | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Manufacturer Package Code | PRSS0004AL | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Renesas Electronics | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 110 A | |
Drain-source On Resistance-Max | 0.0028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 288 W | |
Pulsed Drain Current-Max (IDM) | 440 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for NP110N055PUG-E1-AY
This table gives cross-reference parts and alternative options found for NP110N055PUG-E1-AY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NP110N055PUG-E1-AY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NP110N055PUJ-E1B-AY | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | NP110N055PUG-E1-AY vs NP110N055PUJ-E1B-AY |
NP110N055PUJ-E2B-AY | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | NP110N055PUG-E1-AY vs NP110N055PUJ-E2B-AY |
NP110N055PUG-E2-AY | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | NP110N055PUG-E1-AY vs NP110N055PUG-E2-AY |
NP110N055PUG-AZ | 110A, 55V, 0.0028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZP, 3 PIN | Renesas Electronics Corporation | NP110N055PUG-E1-AY vs NP110N055PUG-AZ |