Part Details for NE76118-T1M by NEC Compound Semiconductor Devices Ltd
Overview of NE76118-T1M by NEC Compound Semiconductor Devices Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
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Part Details for NE76118-T1M
NE76118-T1M CAD Models
NE76118-T1M Part Data Attributes
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NE76118-T1M
NEC Compound Semiconductor Devices Ltd
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Datasheet
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NE76118-T1M
NEC Compound Semiconductor Devices Ltd
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEC COMPOUND SEMICONDUCTOR DEVICES LTD | |
| Package Description | PLASTIC, SUPERMINI-4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 4 V | |
| Drain Current-Max (ID) | 0.02 A | |
| FET Technology | METAL SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-PDSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 9.5 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for NE76118-T1M
This table gives cross-reference parts and alternative options found for NE76118-T1M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE76118-T1M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE72218-T2-57 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | NE76118-T1M vs NE72218-T2-57 |
| NE72218-58 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | NE76118-T1M vs NE72218-58 |
| NE76118 | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 | NEC Compound Semiconductor Devices Ltd | NE76118-T1M vs NE76118 |
| FHX14LG | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN | FUJITSU Limited | NE76118-T1M vs FHX14LG |
| NE76038-T1A | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4 | NEC Electronics Group | NE76118-T1M vs NE76038-T1A |
| CFH120-10 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, MW-4, 4 PIN | Infineon Technologies AG | NE76118-T1M vs CFH120-10 |
| NE76118-TI | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, | NEC Compound Semiconductor Devices Ltd | NE76118-T1M vs NE76118-TI |
| CFH120-08 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, High Electron Mobility FET, PLASTIC, MW-4, 4 PIN | TriQuint Semiconductor | NE76118-T1M vs CFH120-08 |
| NE425S01 | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET | Renesas Electronics Corporation | NE76118-T1M vs NE425S01 |
| CFY30 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET | TriQuint Semiconductor | NE76118-T1M vs CFY30 |