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Transistors RF Power Field-Effect Transistors NE5520379A

NE5520379A
Description: RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

Overview of NE5520379A by NEC Compound Semiconductor Devices Ltd

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
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  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

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Part Data Attributes for NE5520379A by NEC Compound Semiconductor Devices Ltd
Parametric Data

NE5520379A
NEC Compound Semiconductor Devices Ltd
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Package Description
79A, 4 PIN
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
3.8 V
Drain Current-Max (ID)
1.5 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
L BAND
JESD-30 Code
R-XQMW-F4
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
MICROWAVE
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
FLAT
Terminal Position
QUAD
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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  1. NE5520379A
    NEC Compound Semiconductor Devices Ltd
    RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
    VS

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