Datasheets
NE5517AH-300 by: LSI Corporation

EEPROM, 2KX8, 300ns, Parallel, MOS, PQCC32

Part Details for NE5517AH-300 by LSI Corporation

Overview of NE5517AH-300 by LSI Corporation

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for NE5517AH-300

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NE5517AH-300 Part Data Attributes

NE5517AH-300 LSI Corporation
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NE5517AH-300 LSI Corporation EEPROM, 2KX8, 300ns, Parallel, MOS, PQCC32
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SEEQ TECHNOLOGY INC
Package Description QCCJ, LDCC32,.5X.6
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.51
Access Time-Max 300 ns
Command User Interface NO
Data Polling YES
Endurance 1000000 Write/Erase Cycles
JESD-30 Code R-PQCC-J32
JESD-609 Code e0
Memory Density 16384 bit
Memory IC Type EEPROM
Memory Width 8
Number of Terminals 32
Number of Words 2048 words
Number of Words Code 2000
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 2KX8
Package Body Material PLASTIC/EPOXY
Package Code QCCJ
Package Equivalence Code LDCC32,.5X.6
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Supply Voltage-Nom (Vsup) 5 V
Surface Mount YES
Technology MOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form J BEND
Terminal Pitch 1.27 mm
Terminal Position QUAD
Toggle Bit NO
Write Cycle Time-Max (tWC) 2 ms

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