Part Details for NE3509M04-T2B-A by Renesas Electronics Corporation
Overview of NE3509M04-T2B-A by Renesas Electronics Corporation
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Part Details for NE3509M04-T2B-A
NE3509M04-T2B-A CAD Models
NE3509M04-T2B-A Part Data Attributes
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NE3509M04-T2B-A
Renesas Electronics Corporation
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NE3509M04-T2B-A
Renesas Electronics Corporation
NE3509M04-T2B-A
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-F4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 3 V | |
| Drain Current-Max (ID) | 0.02 A | |
| FET Technology | HETERO-JUNCTION | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-PDSO-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.15 W | |
| Power Gain-Min (Gp) | 16 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |